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Fairchild Semiconductor Electronic Components Datasheet

FDB110N15A Datasheet

MOSFET

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FDB110N15A pdf
April 2015
FDB110N15A
N-Channel PowerTrench® MOSFET
150 V, 92 A, 11 mΩ
Features
• RDS(on) = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(f > 1 Hz)
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDB110N15A
150
±20
±30
92
65
369
365
6
234
1.56
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB110N15A
0.64
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDB110N15A Datasheet

MOSFET

No Preview Available !

FDB110N15A pdf
Package Marking and Ordering Information
Part Number
FDB110N15A
Top Mark
FDB110N15A
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 92 A
VDS = 10 V, ID = 92 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, ID = 92 A
VGS = 10 V, VDS = 75 V,
ID = 92 A
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
VDD = 75 V, ID = 92 A,
VGS = 10 V, RG = 4.7 Ω
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.09
-
-
-
-
9.25
118
3390
334
14
583
47
16
7.9
9.7
25
26
46
14
2.5
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 92 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 92 A, VDD = 75 V,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width-limited by maximum junction temperature.
2. L = 3 mH, IAS = 15.6 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 92 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
89
255
Quantity
800 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
11.0 mΩ
-S
4510
445
-
-
61
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
60 ns
62 ns
102 ns
38 ns
-Ω
92 A
369 A
1.25 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
2
www.fairchildsemi.com


Part Number FDB110N15A
Description MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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