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Fairchild Semiconductor Electronic Components Datasheet

F08S60SNTU Datasheet

FFPF08S60SNTU

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F08S60SNTU pdf
FFPF08S60SN
Features
• High Speed Switching, trr < 25ns @ IF = 8A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
May 2008
STEALTHTM II Rectifier
tm
8A, 600V STEALTHTM II Rectifier
The FFPF08S60SN is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
TO-220F-2L
1. Cathode 2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 60oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
Device
Package
F08S60SN
FFPF08S60SNTU
TO220F-2L
Reel Size
-
Ratings
600
600
600
8
60
-65 to +150
Units
V
V
V
A
A
oC
Ratings
6.8
Units
oC/W
Tape Width
-
Quantity
50
©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. A
1
www.fairchildsemi.com
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Fairchild Semiconductor Electronic Components Datasheet

F08S60SNTU Datasheet

FFPF08S60SNTU

No Preview Available !

F08S60SNTU pdf
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
VFM1
IF = 8A
IF = 8A
IRM1
VR = 600V
VR = 600V
trr IF = 1A, di/dt = 100A/μs, VR = 30V
trr
Irr
S factor
IF = 8A, di/dt = 200A/μs, VR = 390V
Qrr
trr
Irr
S factor
IF = 8A, di/dt = 200A/μs, VR = 390V
Qrr
WAVL
Avalanche Energy ( L = 40mH)
Notes:
1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
10
Typ.
2.7
2.1
-
-
13
15
2.5
0.4
19
32
3.8
0.7
62
-
Max.
3.4
-
100
500
-
25
-
-
-
-
-
-
-
-
Units
V
μA
ns
ns
A
nC
ns
A
nC
mJ
Trr test circuit and waveform
Avalanch energy test circuit and waveform
FFPF08S60SN Rev. A 2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/



Fairchild Semiconductor Electronic Components Datasheet

F08S60SNTU Datasheet

FFPF08S60SNTU

No Preview Available !

F08S60SNTU pdf
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
20
10
TC = 125oC
TC = 75oC
1 TC = 25oC
0.1
01234
Forward Voltage, V [V]
F
Figure 3.Typical Junction Capacitance
5
50
Typical Capacitance
at 0V = 43 pF
40
30
20
10
0
0.1 1 10
Reverse Voltage, VR [V]
Figure 5. Typical Reverse Recovery
Current vs. di/dt
10
100
8
6 TC = 125oC
4 TC = 75oC
2 TC = 25oC
I = 8A
F
0
100 200 300 400 500 600
di/dt [A/μs]
Figure 2. Typical Reverse Current vs.
Reverse Voltage
40
10
TC = 125oC
1
TC = 75oC
0.1
0.01
TC = 25oC
0.001
10 100 200 300 400 500 600
Reverse Voltage, VR [V]
Figure 4. Typical Reverse Recovery Time
vs. di/dt
40
I = 8A
F
30 TC = 125oC
TC = 75oC
20
TC = 25oC
10
100 200 300 400 500 600
di/dt [A/μs]
Figure 6. Forward Current Derating Curve
12
9
6
3
0
25 50 75 100 125 150
Case temperature, TC [oC]
FFPF08S60SN Rev. A
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/




Part Number F08S60SNTU
Description FFPF08S60SNTU
Maker Fairchild Semiconductor
Total Page 5 Pages
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