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Fairchild Semiconductor Electronic Components Datasheet

MPSW56 Datasheet

PNP General Purpose Amplifier

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MPSW56 pdf
MPSW56
C
BE
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
80
VCBO
VEBO
IC
TJ, Tstg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
80
4.0
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSW56
PD Total Device Dissipation
Derate above 25°C
1.0
8.0
RθJC
Thermal Resistance, Junction to Case
50
RθJA Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
°C/W
2000 Fairchild Semiconductor Corporation
MPSW56, Rev A


Fairchild Semiconductor Electronic Components Datasheet

MPSW56 Datasheet

PNP General Purpose Amplifier

No Preview Available !

MPSW56 pdf
Electrical Characteristics
Symbol
Parameter
PNP General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
ICBO
ICEO
IEBO
C ollector-E m itter B reakdow n
V oltage
C ollector-B ase B reakdow n V oltage
E m itter-B ase B reakdow n V oltage
C ollector-C utoff C urrent
C ollector-C utoff C urrent
E m itter-C utoff C urrent
IC = 1.0 m A , IB = 0
IC = 100 µA , IE = 0
IE = 1.0 m A , IC = 0
V CB = 60 V , IE = 0
VCE = 60 V
V EB = 3.0 V , IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, VCE = 5.0 V
80 V
80 V
4.0 V
0.1 µA
0.5 µA
0.10
µA
100
50
0.5
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
Cob Collector-Base Capacitance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
IC = 250 mA, VCE = 5.0 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
50
MHz
15 pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
125 °C
150
VCE = 1.0 V
100
25 °C
50 - 40 °C
0
0.01
0.02 0.05 0.1
0.5
IC - COLLECTOR CURRENT (mA)
1
Collector-Emitter Saturation
Voltage vs Collector Current
2
1 β = 10
25 °C
0.1 - 40 ºC
125 ºC
0.01
10
100
I C - COLLECTOR CURRENT (mA)
P
1000


Part Number MPSW56
Description PNP General Purpose Amplifier
Maker Fairchild
Total Page 9 Pages
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