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Fairchild Semiconductor Electronic Components Datasheet

MPSW3725 Datasheet

NPN Transistor

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MPSW3725 pdf
MPSW3725
C
BE
TO-226
NPN Transistor
This device is designed for high current, low impedance line
driver applications. Sourced from Process 26.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
40
60
6.0
1.2
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
MPSW3725
1.0
8.0
125
50
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
°C/W
1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

MPSW3725 Datasheet

NPN Transistor

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MPSW3725 pdf
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
NPN Transistor
(continued)
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, VBE = 0
IC = 100 µA, ICE = 0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 100°C
40
60
60
6.0
V
V
V
V
100 nA
10 µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC=100mA,VCE=1.0V,TA=-55°C
IC = 300 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC=500mA,VCE=1.0V,TA=-55°C
IC = 800 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
30
60
30
40
35
20
20
25
180
0.25 V
0.26 V
0.4 V
0.52 V
0.8 V
0.95 V
0.76 V
0.86 V
1.1 V
1.2 V
1.5 V
1.7 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo Input Capacitance
IC = 50 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
250
MHz
25 pF
100 pF
SWITCHING CHARACTERISTICS
ton Turn-on Time
td Delay Time
tr Rise Time
toff Turn-off Time
ts Storage Time
tf Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
VCC = 30 V, VBE = 3.8 V,
IC = 500 mA, IB1 = 50 mA
VCC = 30 V, IC = 500mA
IB1 = IB2 = 50 mA
22 ns
10 ns
12 ns
250 ns
235 ns
15 ns


Part Number MPSW3725
Description NPN Transistor
Maker Fairchild
Total Page 8 Pages
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