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EIC discrete Semiconductors
EIC discrete Semiconductors

B125-C1500 Datasheet Preview

B125-C1500 Datasheet

SILICON BRIDGE RECTIFIERS

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B125-C1500 pdf
B40 - B380/C1500R
PRV : 100 - 900 Volts
Io : 1.5 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL B40- B80- B125- B250- B380-
C1500R C1500R C1500R C1500R C1500R
Maximum Recurrent Peak Reverse Voltage
VRRM 100 200 300 600 900
Maximum RMS Input Voltage R+C -Load
VRMS 40 80 125 250 380
Maximum DC Blocking Voltage
VDC 100 200 300 600 900
Maximum Average Forward Current For
Free Air Operation at Tc = 45 °C R+L -Load
I F(AV)
1.6
C -Load
1.5
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms. )
Maximum Series Resistor C-Load VRMS = ± 10%
I FSM
50
I2t 10
Rt 1.0 2.0 4.0 8.0 12.0
Maximum load Capacitance + 50%
-10%
CL
5000 2500 1000
500
200
Maximum Forward Voltage per Diode at IF = 1.5 Amps. VF
1.0
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
IR
RθJA
TJ
10
36
- 50 to + 125
Storage Temperature Range
TSTG
- 50 to + 150
UNIT
Volts
Volts
Volts
Amps.
Amps.
A2S
µF
Volts
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
UPDATE : APRIL 23,1998



EIC discrete Semiconductors
EIC discrete Semiconductors

B125-C1500 Datasheet Preview

B125-C1500 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

B125-C1500 pdf
RATING AND CHARACTERISTIC CURVES ( B40-B380/C1500R )
FIG.1 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B40 C1500R - B125 C1500R
1.8
Resistive or
1.5 Inductive load.
1.2
Capacitive Load
< 500µF
0.9 500-5000µF
0.6
PC Board
0.375(9.5mm)
0.3
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0
0 20 40 60 80 100 120
CASE TEMPERATURE, ( °C)
140
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B250 C1500R - B380 C1500R
1.8
Resistive or
Inductive load.
1.5
1.2 Capacitive
Load
0.9 < 500 µF
500-5000µF
0.6
PC Board
0.375(9.5mm)
0.3
0
20
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
40 60
80
100
120
CASE TEMPERATURE, ( °C)
140
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1 1.0
TJ = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE, VOLTS
1.8
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
60
45
30
15
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG.6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
60
40
20
10
TJ = 25 °C
6 f = 1MHz
4 Vsig = 50mVp-p
2
1
0.1 0.2 0.6 1
2 46
10 20 40
100
REVERSE VOLTAGE, VOLTS


Part Number B125-C1500
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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