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EIC discrete Semiconductors
EIC discrete Semiconductors

B125-C1000 Datasheet Preview

B125-C1000 Datasheet

SILICON BRIDGE RECTIFIERS

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B125-C1000 pdf
B40-B380/C1000
PRV : 100 - 900 Volts
Io : 1.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Maximum Average Forward Current For
Free Air Operation at Tc = 45°C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms.)
Maximum Series Resistor C-Load VRMS = ± 10%
Maximum load Capacitance + 50%
-10%
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
B40-
C1000
100
40
100
B80-
C1000
200
80
200
B125-
C1000
300
125
300
B250-
C1000
600
250
600
B380-
C1000
900
380
900
UNIT
Volts
Volts
Volts
IF(AV)
1.2 Amps.
1.0
IFSM 40 Amps.
I2t 10 A2S
Rt 1.0 2.0 4.0 8.0 12.0
CL
5000
2500
1000
500
200
µF
VF 1.0 Volts
IR
RθJA
TJ
TSTG
10
36
- 50 to + 125
- 50 to + 125
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : AUGUST 26,1998



EIC discrete Semiconductors
EIC discrete Semiconductors

B125-C1000 Datasheet Preview

B125-C1000 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

B125-C1000 pdf
RATING AND CHARACTERISTIC CURVES ( B40-B380/C1000 )
FIG.1 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B40 C1000 - B125 C1000
1.2
Resistive or
1.0 Inductive load.
Capacitive Load
0.8 0-10µF
10-100µF
=100µF
0.6
0.4
PC Board
0.375(9.5mm)
0.2
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0
0 20 40 60 80 100 120
CASE TEMPERATURE, ( °C)
140
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B250 C1000 - B380 C1000
1.2
Resistive or
1.0 Inductive load.
Capacitive
0.8
0-10µF
10-100µF
0.6 =100µF
0.4
PC Board
0.375(9.5mm)
0.2
0
20
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
40 60
80 100 120
CASE TEMPERATURE, ( °C)
140
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10
1
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE, VOLTS
1.8
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
40
30
20
10
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG.6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
60 TJ = 25 °C
40
20
10
6 f = 1MHz
4 Vsig = 50mVp-p
2
1
0.1 0.2 0.6 1 2 4 6
10 20 40
100
REVERSE VOLTAGE, VOLTS


Part Number B125-C1000
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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B125-C1000 pdf
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