http://www.www.datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Comchip
Comchip

1N5818-G Datasheet Preview

1N5818-G Datasheet

Schottky Barrier Rectifiers

No Preview Available !

1N5818-G pdf
Schottky Barrier Rectifiers
1N5817-G Thru. 1N5819-G
Reverse Voltage: 20 to 40 V
Forward Current: 1.0 A
RoHS Device
Features
-Metal-Semiconductor junction with guard ring.
-Epitaxial construction.
-Low forward voltage drop.
-High current capability.
-For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
Mechanical data
-Case: JEDEC DO-41 molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode
-Mounting position: Any
-Weight: 0.012 once, 0.34 grams
DO-41
1.000(25.40) Min.
0.034(0.90)
DIA.
0.028(0.70)
0.205(5.20)
0.165(4.20)
1.000(25.40) Min.
0.107(2.70)
DIA.
0.080(2.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol 1N5817-G
1N5818-G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current @TA=75°C
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum forward voltage at 1.0A DC
Maximum forward voltage at 3.0A DC
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance (Note 1)
@TJ=25°C
@TJ=100°C
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
VF
IR
CJ
RθJA
TJ
TSTG
20
14
20
0.450
0.750
30
21
30
1.0
25
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
1N5819-G
40
28
40
0.600
0.900
Unit
V
V
V
A
A
V
V
mA
pF
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BG016
Comchip Technology CO., LTD.
REV:A
Page 1



Comchip
Comchip

1N5818-G Datasheet Preview

1N5818-G Datasheet

Schottky Barrier Rectifiers

No Preview Available !

1N5818-G pdf
Schottky Barrier Rectifiers
Rating and Characteristic Curves (1N5817-G Thru.1N5819-G)
Fig.1 - Forward Current Derating Curve
1.2
1.0
0.8
0.6
0.4
Single phase
0.2 Half wave, 60Hz
Resistive or
inductive load
0
0 25 50 75 100 125 150
Ambient Temperature, (°C)
175
Fig.3 - Typical Junction Capacitance
1000
f = 1MHz
TJ = 25°C
Fig.2 - Maximum Non-Repetitive
Surge Current
40
Pulse width 8.3ms
single half sine-wave
(JEDEC Method)
30
20
10
0
1 10 100
Number of Cycles at 60Hz
Fig.4 - Typical Forward Characteristics
10
100
1
1 10 100
Reverse Voltage, (V)
1.0
0.1
0
TJ = 25°C
PULSE WIDTH 300us
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BG016
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number 1N5818-G
Description Schottky Barrier Rectifiers
Maker Comchip
Total Page 5 Pages
PDF Download
1N5818-G pdf
1N5818-G Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 1N5818-1 1 Amp Schottky Barrier Rectifiers Microsemi
Microsemi
1N5818-1 pdf
2 1N5818-G Schottky Barrier Rectifiers Comchip
Comchip
1N5818-G pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy