http://www.www.datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





CET
CET

CEM9952A Datasheet Preview

CEM9952A Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM9952A pdf
CEM9952A
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 3.7A, RDS(ON) = 80m@VGS = 10V.
RDS(ON) = 110m@VGS = 4.5V.
-30V, -2.9A, RDS(ON) = 100m@VGS = -10V.
RDS(ON) = 150m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 3.7
IDM 15
P-Channel
-30
±20
-2.9
-10
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
2002.July
5 - 260
http://www.cetsemi.com



CET
CET

CEM9952A Datasheet Preview

CEM9952A Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM9952A pdf
CEM9952A
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
VGS = 4.5V, ID = 0.5A
VDS = 15V, ID = 3.7A
1
3
3V
60 80 m
83 110 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 10V, VGS = 0V,
f = 1.0 MHz
335
185
pF
pF
Crss 50 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 3.7A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.25A
18 35 ns
13 20 ns
35 50 ns
5 50 ns
8.5 11 nC
1.5 nC
1.8 nC
1.2 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5
5 - 261


Part Number CEM9952A
Description Dual N- & P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 7 Pages
PDF Download
CEM9952A pdf
CEM9952A Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 CEM9952A Dual N- & P-Channel Enhancement Mode Field Effect Transistor CET
CET
CEM9952A pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy