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CEK02N7G Datasheet Preview

CEK02N7G Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEK02N7G pdf
CEK02N7G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
700V, 0.4A, RDS(ON) = 6.75 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S
TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 0.4
IDM 1.6
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Leadb
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2011.Sep.
http://www.cetsemi.com



CET
CET

CEK02N7G Datasheet Preview

CEK02N7G Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEK02N7G pdf
CEK02N7G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.2A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 0.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.4A,
VGS = 10V, RGEN = 18
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.4A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
Min
700
2
Typ
5.75
1.5
320
55
20
13
15
22
20
9
4.5
5
Max Units
25
100
-100
V
µA
nA
nA
4V
6.75
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.4 A
1.5 V
4
2


Part Number CEK02N7G
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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