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CEH3688 Datasheet Preview

CEH3688 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEH3688 pdf
CEH3688
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 3.0A, RDS(ON) = 78m@VGS = 10V.
RDS(ON) = 100m@VGS = 4.5V.
RDS(ON) = 155m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
D1 S1 D2
654
1 23
G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±12
ID 3
IDM 12
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2005.July
http://www.cetsemi.com



CET
CET

CEH3688 Datasheet Preview

CEH3688 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEH3688 pdf
CEH3688
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3.4A
VGS = 4.5V, ID = 3.0A
VGS = 2.5V, ID = 2.0A
VDS = 5V, ID = 3.0A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 2.4A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
30
0.6
Typ Max Units
1
±100
V
µA
nA
1.5 V
62 78 m
80 100 m
115 155 m
4S
255 pF
80 pF
50 pF
8 16 ns
3 7 ns
18 36 ns
3 7 ns
3 4 nC
0.6 nC
0.9 nC
1A
1.1 V
8
2


Part Number CEH3688
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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