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CEG3456A Datasheet Preview

CEG3456A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEG3456A pdf
CEG3456A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 4.8A, RDS(ON) = 38m@VGS = 10V.
RDS(ON) = 52m@VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
D
S
S
D
TSSOP-8
G
S
S
D
(1,5,8)D
(4)G
(2,3,6,7)S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 4.8
IDM 20
Maximum Power Dissipation
PD 1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
83
Units
V
V
A
A
W
C
Units
C/W
2003.July
8-6
http://www.cetsemi.com



CET
CET

CEG3456A Datasheet Preview

CEG3456A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEG3456A pdf
CEG3456A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 4.8A
VGS = 4.5V, ID = 3.8A
VDS = 10V, ID = 4.8A
1
3V
30 38 m
40 52 m
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
400
180
pF
pF
Crss 55 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 4.8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.7A
23 45 ns
14 35 ns
45 90 ns
10 30 ns
12 17 nC
2 nC
3 nC
1.7 A
1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
8
8-7


Part Number CEG3456A
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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