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CEB15P15 Datasheet Preview

CEB15P15 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CEB15P15 pdf
CEP15P15/CEB15P15
CEF15P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP15P15
CEB15P15
CEF15P15
VDSS
-150V
-150V
-150V
RDS(ON)
0.24Ω
0.24Ω
0.24Ω
ID
-15A
-15A
-15A d
@VGS
-10V
-10V
-10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage(Typ)
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS -150
VGS ±20
ID -15
-9
IDM e
- 60
96
PD
0.77
TO-220F
-15 d
-9d
- 60 d
34
0.27
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current h
EAS 250
IAS 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.3
62.5
3.7
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 3. 2013.Feb
http://www.cetsemi.com



CET
CET

CEB15P15 Datasheet Preview

CEB15P15 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEB15P15 pdf
CEP15P15/CEB15P15
CEF15P15
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = -135, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = -10V, ID = -7.5A
Gate input resistance
Rg f=1MHz,open Drain
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -75V, ID = -7.5A,
VGS = -10V, RGEN = 10
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -120V, ID = -7.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -15A
Min
-2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
h.L = 5mH, IAS =10A, VDD = 25V, RG = 25, Starting TJ = 25 C
Typ
-150
0.2
5.3
1245
175
35
18
8
63
14
31
5
12
Max Units
-1
100
-100
V
µA
nA
nA
-4 V
0.24
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-15 A
-1.2 V
2


Part Number CEB15P15
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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CEB15P15 pdf
CEB15P15 Datasheet PDF
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