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Analog Devices Semiconductor Electronic Components Datasheet

ADP3522 Datasheet

GSM Power Management System

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ADP3522 pdf
GSM Power Management System
ADP3522
FEATURES
Handles all GSM Baseband Power Management
6 LDOs Optimized for Specific GSM Subsystems
Li-Ion Battery Charge Function
Optimized for the AD20msp430 Baseband Chipset
Reduced Package Size: 5 mm ؋ 5 mm LFCSP-32
APPLICATIONS
GSM/GPRS Handsets
GENERAL DESCRIPTION
The ADP3522 is a multifunction power system chip optimized
for GSM/GPRS handsets, especially those based on the Analog
Devices AD20msp430 system solution with 1.8 V digital
baseband processors, such as the AD6525, AD6526, and
AD6528. It contains six LDOs, one to power each of the critical
GSM subblocks. Sophisticated controls are available for power-
up during battery charging, keypad interface, and RTC alarm.
The charge circuit maintains low current charging during the
initial charge phase and provides an end of charge (EOC) signal
when a Li-Ion battery is being charged. This product also meets
the market trend of reduced size with a new LFCSP package.
Its footprint is only 5 mm ϫ 5 mm and yet offers excellent ther-
mal performance due to the exposed die attached paddle.
The ADP3522 is specified over the temperature range of
–20°C to +85°C.
PWRONKEY
ROWX
PWRONIN
TCXOEN
SIMEN
RESCAP
CHRDET
EOC
CHGEN
BATSNS
ISENSE
GATEIN
CHRIN
GATEDR
FUNCTIONAL BLOCK DIAGRAM
VBAT VBAT2 VRTCIN
POWER-UP
SEQUENCING
AND
PROTECTION
LOGIC
SIM
LDO
DIGITAL
CORE LDO
ANALOG
LDO
TCXO
LDO
MEMORY
LDO
RTC
LDO
REF
BUFFER
BATTERY
CHARGE
CONTROLLER
BATTERY
VOLTAGE
DIVIDER
ADP3522
VSIM
SIMVSEL
VCORE
VAN
VTCXO
VMEM
VRTC
REFOUT
RESET
MVBAT
DGND
AGND
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.


Analog Devices Semiconductor Electronic Components Datasheet

ADP3522 Datasheet

GSM Power Management System

No Preview Available !

ADP3522 pdf
ADP3522–SPECIFICATIONS (–20؇C < TA < +85؇C, VBAT = VBAT2 = 3 V–5.5 V, CVSIM = CVCORE = CVAN =
ELECTRICAL CHARACTERISTICS1
CVMEM = 2.2 F, VTCXO = 0.22 F, CVRTC = 0.1 F, CVBAT = 10 F, minimum
loads applied on all outputs, unless otherwise noted.)
Parameter
Symbol Conditions
Min Typ Max
Unit
SHUTDOWN SUPPLY CURRENT
ICC
VBAT 2.5 V
VBAT = VBAT2 = 2.3 V
(Deep Discharged Lockout Active)
2.5 V < VBAT 3.2 V
VBAT = VBAT2 = 3.0 V
(UVLO Active)
VBAT > 3.2 V
VBAT = VBAT2 = 4.0 V
15 40
30 55
45 80
µA
µA
µA
OPERATING GROUND CURRENT
VSIM, VCORE, VMEM, VRTC On
All LDOs On
All LDOs On
IGND
VBAT = 3.6 V
Minimum Loads
Minimum Loads
Maximum Loads
225 300
345 450
1.0 3.0
µA
µA
% of Max
Load
UVLO ON THRESHOLD
VUVLO Rising Edge
3.2 3.3
V
UVLO HYSTERESIS
200 mV
DEEP DISCHARGED LOCKOUT ON VDDLO Falling Edge
THRESHOLD
2.4 2.75 V
DEEP DISCHARGED LOCKOUT
HYSTERESIS
100 mV
INPUT HIGH VOLTAGE
PWRONIN
TCXOEN, SIMEN,
CHGEN, GATEIN, SIMVSEL
VIH
1.0 V
1.5 V
INPUT LOW VOLTAGE
(PWRONIN, TCXOEN, SIMEN,
CHGEN, SIMVSEL)
VIL
0.3 V
PWRONIN Pin Pull-Down Resistor
INPUT HIGH BIAS CURRENT
(TCXOEN, SIMEN, CHGEN,
SIMVSEL )
RPD
IIH
200 1000 5000
1.0
k
µA
INPUT LOW BIAS CURRENT
(PWRONIN, TCXOEN, SIMEN,
CHGEN, SIMVSEL)
IIL
–1.0 µA
PWRONKEY INPUT HIGH VOLTAGE
PWRONKEY INPUT LOW VOLTAGE
PWRONKEY INPUT PULL-UP
RESISTANCE TO VBAT
VIH
VIL
0.7 ϫ VBAT
0.3 ϫ VBAT
70 100 130
V
V
k
THERMAL SHUTDOWN
THRESHOLD2
160 ºC
THERMAL SHUTDOWN
HYSTERESIS
45 ºC
–2– REV. 0


Part Number ADP3522
Description GSM Power Management System
Maker Analog Devices
Total Page 20 Pages
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