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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

T16N50 Datasheet Preview

T16N50 Datasheet

AOT16N50

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T16N50 pdf
AOT16N50/AOTF16N50
500V, 16A N-Channel MOSFET
General Description
Product Summary
The AOT16N50 & AOTF16N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT16N50L & AOTF16N50L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
600V@150
16A
< 0.37
D
G
D
S
AOT16N50
G
D
S
AOTF16N50
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT16N50
AOTF16N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
16 16*
11 11*
64
6
540
1080
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
278 50.0
2.2 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT16N50
65
0.5
AOTF16N50
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.45
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev3: Jul 2011
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

T16N50 Datasheet Preview

T16N50 Datasheet

AOT16N50

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T16N50 pdf
AOT16N50/AOTF16N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
600
V
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
0.5 V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=8A
VDS=40V, ID=8A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.3 4 4.5 V
0.29 0.37
20 S
0.71 1
V
16 A
64 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1531
153
11
1.75
1914
191
16
3.5
2297
229
20
5.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=16A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=16A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=16A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=16A,dI/dt=100A/µs,VDS=100V
34 42.8 51
7.5 9.3 11
16 20.3 24
44
84
92
50
265 334 400
4.5 6 7.5
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Jul 2011
www.aosmd.com
Page 2 of 6




Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

T16N50 Datasheet Preview

T16N50 Datasheet

AOT16N50

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T16N50 pdf
AOT16N50/AOTF16N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
32
28
24
20
16
12
8
4
0
0
0.7
10V
6.5V
6V
VGS=5.5V
100
VDS=40V
10
125°C
1
-55°C
25°C
5 10 15 20 25
VDS (Volts)
Fig 1: On-Region Characteristics
30
0.1
2
3
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
0.6
0.5
VGS=10V
0.4
0.3
0.2
0 4 8 12 16 20 24 28 32
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
2.5 VGS=10V
ID=8A
2
1.5
1
0.5
0
-100 -50
0
50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev3: Jul 2011
www.aosmd.com
Page 3 of 6




Part Number T16N50
Description AOT16N50
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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