Zetex Semiconductors Datasheet | Specifications & PDF Download

www.DataSheet4U.com Package information - SOT23-5 Surface mounted, 5 pin package Package outline DIM A A1 A2 b C D E E1 e e1 L a° Min. 0.90 0.00 0.9

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Wat

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Wa

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SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT749 C1 C1 C2 C2 PARTMARKING DETAIL – T749 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOL

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps

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www.DataSheet4U.com Package information - SSOP28 Surface mounted, 28 pin package Package outline D ␪ E1 E L c A2 A e A1 b Dim. A A1 A2 D E E1 M

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 2 – NOV 93 www.DataSheet4U.com MPSA12P E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N67

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Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt 2N6714 2N6715 C B E

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SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 PIN CONFIGURATION 7 BZX84 SERIES C2V7 to C47 1 3 2 SOT23 ABSOLUTE MAXIM

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ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC(cont) = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5

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www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On

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PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 4 – JUNE 94 * * * * * 4 Amps continuous current Up to 15 Amps peak current Very low satu

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 7 FEATURES * Compact geometry * Fast switching speeds * No secondary breakd

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ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D

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NPN SILICON PLANAR RF TRANSISTOR ISSUE 4 – FEB 94 FEATURES * High fT=650MHz min * Max. capacitance 0.7pF * Low noise <5dB at 500MHz APPLICATIONS * Key

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DataSheet4U.com DataSheet 4 U .com DataSheet4U.com www.DataSheet4U.com NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – FEB 94 FEATURES * 80 Vo

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