WON-TOP Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS KBPC25S SERIES 25A SINGLE PHASE BRIDGE RECTIFIER Pb Features  Diffused Junction  Low Forward Voltage Drop  High Current Cap

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  1.5W Power Dissipation  3.3V – 200V Nominal Zener Voltage  5% Standard Vz Toler

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  15000W Peak Pulse Power Dissipation  17V – 280V Standoff Voltage  Uni- and Bi-D

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  15000W Peak Pulse Power Dissipation  17V – 280V Standoff Voltage  Uni- and Bi-D

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  1500W Peak Pulse Power Dissipation  5.5V – 513V Standoff Voltage  Uni- and Bi-D

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W TE POWER SEMICONDUCTORS Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Ca

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  1500W Peak Pulse Power Dissipation  5.5V – 513V Standoff Voltage  Uni- and Bi-D

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  5000W Peak Pulse Power Dissipation  5.0V – 440V Standoff Voltage  Uni- and Bi-D

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® WON-TOP ELECTRONICS KBP200G – KBP2010G 2.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER Pb Features  Glass Passivated Die Construction  Low F

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® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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® WON-TOP ELECTRONICS SK82 – S810 8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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® WON-TOP ELECTRONICS SB3020DC – SB30100DC 30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Pb Features  Low Forward Voltage  Epitaxial Construct

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® WON-TOP ELECTRONICS ER1000 – ER1006 10A GLASS PASSIVATED SUPERFAST RECTIFIER Pb Features  Glass Passivated Die Construction  Superfast 35nS and

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® WON-TOP ELECTRONICS Features  Planar Die Construction  500mW Power Dissipation  2.0 – 56V Nominal Zener Voltage  Ideally Suited for Automated As

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  5.0W Power Dissipation  3.3V – 200V Nominal Zener Voltage  5% Standard Vz Toler

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® WON-TOP ELECTRONICS Features  Planar Die Construction  500mW Power Dissipation  2.0 – 56V Nominal Zener Voltage  Ideally Suited for Automated As

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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® WON-TOP ELECTRONICS Features  Planar Die Construction  500mW Power Dissipation  2.4V – 75V Nominal Zener Voltage  5% Standard Vz Tolerance  Ide

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  30000W Peak Pulse Power Dissipation  28V – 288V Standoff Voltage  Uni- and Bi-D

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  30000W Peak Pulse Power Dissipation  28V – 288V Standoff Voltage  Uni- and Bi-D

(2 views)