U309 Datasheet | Pinout, Features, Price Comparison & PDF

S T U309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C h

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U308 U309 U310 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Gate Current Total Device Dissipation (& T/\ = 25°C Derate above 25°C

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N-Channel JFET High Frequency Amplifier CORPORATION U308 – U310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain o

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www.DataSheet4U.com LUM-115HMU309 LED displays 24×48 dot matrix unit LUM-115HMU309 The LUM-115HMU309 is a 24×48 dot matrix display which can be used

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U309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U309 The U309 is a high frequency n-channel JFET offering a wide range and low noi

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InterFET Product Folder Technical Support Order Now U308-9 U308, U309 N-Channel JFET Features • InterFET N0072L Geometry • Low Noise: 2 nV/√Hz T

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n-channel JFETs designed for • • • H Performance Curves NZA See Section 4 • VHF Amplifiers • Front End High Sensitivity Amplifiers • Oscillators • M

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LSU309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U309 The LSU309 is a high frequency n-channel JFET offering a wide range and low

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Green Product S T U309DH Apr 20 2007 S amHop Microelectronics C orp. Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T

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a U308-10 N-Channel JFETs General Description The U308 thru U310 series of N-channel JFETs is VHF designed for amplifier, oscillator and mixer ap

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RU3091M N-Channel Advanced Power MOSFET Features • 30V/90A, RDS (ON) =2.8mΩ(Typ.)@VGS=10V RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi

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N-Channel JFET High Frequency Amplifier CORPORATION U308 – U310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain o

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www.DataSheet4U.com LUM-512HMU309 LED displays 16×32 dot matrix unit LUM-512HMU309 The LUM-512HMU309 is a 16×32 dot matrix display which can be used

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CEU3099 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V.

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RU3090M N-Channel Advanced Power MOSFET Features • 30V/98A, RDS (ON) =1.7mΩ(Typ.)@VGS=10V RDS (ON) =3.2mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi

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J/SST/U308 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J308 J309 J310 SST308 SST309 SST310 U309 U310 VGS(off) (V) −1 to −6

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