ATS2835P Datasheet Actions® ATS2835PTM QFN68 Bluetooth Audio Solution Low Power Solution for Portable & Wireless Audio Applications Local MMC/SD Card

ATS2819 Datasheet Version: 1.9 2019-03-22 Declaration Disclaimer Information given in this document is provided just as a reference or example for th

DVB-S2/ABS-S Digital Satellite Tuner M88TS2022 Data Sheet Revision Number: 0.0 Revision Date: September 1, 2009 DVB-S2/ABS-S Digital Satellite Tuner

RfeoftrehtrihsteodlaatMtaaesnsthufreaeetcvtisuiroernsofwebsite 10/100 BASE-T ETHERNET ISOLATION TRANSFORMER P/N: TS21C HF DATA SHEET Page : 1/ 2 Fe

ATC Complementary Output Hall Effect Latch „ Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for ATS276/277 - 3.

ATC Complementary Output Hall Effect Latch „ Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for ATS276/277 - 3.

ATS2837 Datasheet Actions® ATS2837TM QFN68 Bluetooth Audio Solution Low Power Solution for Speech Pre-processing Portable & Wireless Audio Application

ATS2503 Datasheet Latest Version: 1.1 2011-3-14 ATS2503 Datasheet Declaration Circuit diagrams and other information relating to products of Action

Green Product STS2302A Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V ID 4A

S amHop Microelectronics C orp. S T S 2300 MAR . 10 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F

AOTS21311C 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Comp

N-Channel 20 V (D-S) MOSFET DTS2050 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.270 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V ID (A)a, g 0

® TS272C,I,M HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS . . . . . OUTPUT VOLTAGE CAN SWING GROUND EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS GAIN

www.DataSheet4U.com Preliminary Technical Data KEY FEATURES 500 MHz, 2.0 ns Instruction Cycle Rate 12M Bits of Internal—On-Chip—DRAM Memory 25×25 mm

Green Product STS2305 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON)

ATS266 High Voltage Hall Effect Latch „ Features - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA(Continuous) - Reverse protec

® TS272C,I,M HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS . . . . . OUTPUT VOLTAGE CAN SWING GROUND EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS GAIN

S amHop Microelectronics C orp. S T S 2336A Dec 26 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E

TS25P01G THRU TS25P07G Single Phase 25.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 25.0 Amperes Features UL Rec