TP3 Datasheet | Specifications & PDF Download

CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subject to change without notice. SK

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® STP3020L N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET™ POWER MOSFET TYPE ST P3020L s s s V DSS 30 V R DS(on) < 0.022 Ω ID 40 A TYPICAL RDS

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3006/D NPN Silicon RF Power Transistor The TP3006 is designed for cellul

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3PEAK Features TP3232N/TP3222N Microamp Supply-Current, 3V to 5.5V, Up to 470kbps RS-232 Transceivers Description  Meets EIA/TIA-232 and V.28/V.24

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N-Channel 55 V (D-S) MOSFET DTP3205 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () 0.0063 at VGS = 10 V 55 0.0071 at VGS = 4.5 V ID (A)d 110

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IRTP300L d. 50 ms (95%) ±1%±0.5℃， ±0.5%±1℃， 108mm×ф 18mm(*) 0.95 3 a． ， 。 0.8μ m－18μ m 。 ， ，、、， 。 1 IRTP300L 。 。 ，。 IRTP300L

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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPA

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STP3NK90ZFP Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220FP package Features Order code VDS RDS(on) max. ID STP3

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Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradez

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STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 pac

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STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI VDSS 600 V 600 V RDS(on) <4Ω <4Ω ID 2.9 A 2.1

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TP3605 18033419374 QQ：2480425950 28V High Efficiency 1MHz, 2A Step Up Regulator FEATURES  Integrated 80mΩ Power MOSFET  2V to 24V Input Voltage 

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® TP30-xxx Series TRISILTM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITI

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STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI www.DataSheet4U.com s s s s s s s s V DSS 60 V 60 V R

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MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS( on)

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N100 STP3N100FI s s s s s s V DSS 1000 V 1000 V R DS( on) < 5Ω < 5Ω

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www.DataSheet.co.kr STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET TY

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STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is prod

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Integrated Circuits Inc. aMTPxxM Series aMTPxxM Datasheet Multi-time program voice IC APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec.

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