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3PEAK Features TP3232N/TP3222N Microamp Supply-Current, 3V to 5.5V, Up to 470kbps RS-232 Transceivers Description  Meets EIA/TIA-232 and V.28/V.24

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NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable

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VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3960 A 6230 A 60000 A 0.95 V 0.13 mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Jan

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STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, T

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VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 4275 A 6715 A 60000 A 0.95 V 0.130 mΩ Doc. No. 5SYA1051-01 Sep.00 Phase Control Thyristor 5STP 38Q

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Ordering number : ENA1457 ATP301 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ATP301 Features • • • P-Channel Silicon MOSFET General-Purp

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP36N06V/D Designer's TMOS V Power Field Effect Transistor N–Ch

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3PEAK Features TP3232N/TP3222N Microamp Supply-Current, 3V to 5.5V, Up to 470kbps RS-232 Transceivers Description  Meets EIA/TIA-232 and V.28/V.24

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CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subject to change without notice. SK

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NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable

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IRTP300L IRTP300L IRTP300L ，，，， 。，,，， 。 ：,,,,, ； ：、、；、,、 . IRTP300L : : IRTP300L : -20-300°C : -10- 70 °C : -20-80 °C ： 300ms（95%） : 25 :1

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STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) <4Ω <4Ω

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STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) <4Ω <4Ω

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VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1600 3370 5292 49×103 0.94 0.066 V A A A V mΩ Phase Control Thyristor 5STP 34H1601 Doc. No. 5SYA10

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Ordering number : ENA1457A ATP301 P-Channel Power MOSFET –100V, –28A, 75mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=57mΩ (typ.) •

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isc N-Channel MOSFET Transistor IXTP32N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche volta

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® STP30NE03L STP30NE03LFP N - CHANNEL 30V - 0.028 Ω - 30A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP30NE03L STP30NE03LF P s s s s V DSS 30 V 3

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www.DataSheet4U.com www.DataSheet4U.com N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh™ II MOSFET TYPE STP3NC60 STP3NC60FP s s s s s STP3NC60

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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPA

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