TL6 Datasheet | Specifications & PDF Download

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to ch

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SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan

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SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan

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APTGF30TL60T3G www.DataSheet4U.com Three level inverter NPT IGBT Power Module VCES = 600V IC = 30A @ Tc = 80°C Application • Solar converter • Uninte

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XTH-K-L-M-V Vishay Wet Tantalum Capacitors Cylindrical Body, Hermetically Sealed FEATURES • High temperature • High voltage • High capacitance • With

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XTH-K-L-M-V Vishay Wet Tantalum Capacitors Cylindrical Body, Hermetically Sealed FEATURES • High temperature • High voltage • High capacitance • With

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Features  BVCEO > 50V  IC = 1.25A Continuous Collector Current  500mW Power Dissipation  Low Saturation Voltage VCE(sat) < 330mV @ 1.25A  RCE(SAT

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AOTL66912 100V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Combination of low RDS(ON) and wide safe ope

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STL64N4F7AG Datasheet Automotive-grade 40 V, 7.0 mΩ typ., 64 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Features Order code VDS RDS(

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AOTL66912Q 100V N-Channel AlphaSGT TM AEC-Q101 Qualified General Description • AEC-Q101 Qualified • Trench Power MOSFET - AlphaSGTTM technology • Low

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SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right t

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Date Jan. 15. 2003 32M (x16) Flash Memory LH28F320BFB-PTTL60 www.DataSheet4U.com LHF32FB5 • Handle this document carefully for it contains materi

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STL6NM60N N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT™ (5x5) ultra low gate charge MDmesh™ II Power MOSFET Features Type STL6NM60N VDSS @ TJMAX 650

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STL65N3LLH5 N-channel 30 V, 0.0048 Ω , 19 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET Features www.DataSheet4U.com Type VDSS 30 V RDS(on) max <0.

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APTGT50TL60T3G www.DataSheet4U.com Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar co

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XTH-K-L-M-V Vishay Wet Tantalum Capacitors Cylindrical Body, Hermetically Sealed FEATURES • High temperature • High voltage • High capacitance • With

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STL66N3LLH5 Automotive-grade dual N-channel 30 V, 4.5 mΩ typ., 80 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data

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STL66DN3LLH5 Dual N-channel 30 V, 5.9 mΩ , 20 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 double island package Datasheet — production data Features

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STL6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet — preliminary data Features Or

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