TL1 Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6454-B Issued Date : 1993.02.24 Revised Date : 2000.10.01 Page No. : 1/3 HTL145 NPN EPITAXIAL PLAN

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GTL1655 16-bit LVTTL-to-GTL/GTL+ bus transceiver with live insertion Rev. 01 — 11 May 2004 Product data 1. Description The GTL1655 is a 16-bit bus

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UTC TL1451 LINEAR INTEGRATED CIRCUIT DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS DESCRIPTION The UTC TL1451 incorporates on a single monolithic chi

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www.DataSheet4U.com T-1 3/4(5mm) Medium Profile LED Lamps LTL-10203 LTL-10213 LTL-10223 LTL-10233 LTL-10253 Features Low Power Consumption. Wide View

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Free Datasheet http://www.Datasheet4U.com http://www.openimpulse.com TL1838 Infrared Receiver Datasheet 1. Features 　　* Compact design;  　　* Built­i

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ANTI-VANDAL SWITCHES DETECTOR SWITCHES DIP SWITCHES KEYLOCK SWITCHES SWITCHES PUSHBUTTON NAVIGATION tl1014 SerieS tact Switch applicationS / ma

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UNISONIC TECHNOLOGIES CO., LTD UTL1426 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTL1426 uses UTC’s advanced trench technol

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Description JMTL123K JMT N-channel Enhancement Mode Power MOSFET Features Application  VDS=100V, ID=0.17A  Battery Protection RDS(ON) <6Ω @ V

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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to

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K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to

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54 74ETL16245 16-Bit Data Transceiver with Incident Wave Switching PRELIMINARY May 1994 54 74ETL16245 16-Bit Data Transceiver with Incident Wave Swi

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www.DataSheet4U.com STL120NH02V N-channel 20V - 0.0025Ω - 120A - PowerFLAT™ (6x5) STripFET™ III Power MOSFET Target Specification General features T

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2STL1360 2STX1360 Low voltage fast-switching NPN power transistors Features ■ Very low collector-emitter saturation voltage ■ High current gain chara

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LED Lamps InGaN and Phosphor TL1F2-LW1,L 1. Applications • General Lighting 2. Features (1) Size: 6.4 (L) mm × 5.0 (W) mm × 1.35 (H) mm (2) High lumin

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STL120N4LF6AG Automotive-grade N-channel 40 V, 3.0 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data

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