TD1 Datasheet | Specifications & PDF Download

KTD1691 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 NPN 。Silicon NPN transistor in a TO-126 Plastic Package.  / Features PC=1.5W（Ta=25℃）

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RK73H resistors precision 0.5%, 1% tolerance thick film chip resistor features • • • • • RuO2 thick film resistor element Anti-leaching nickel barrie

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DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

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DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

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www.DataSheet4U.com 10/100 Base-TX Transformer Modules Single Port 16 Pin DIL . Meets all IEEE 802.3 and ANSIX 3.263 standard including 350 uH OCL w

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15DK, 20DK, 30DK, 40DK, 10KT, 15KT, 20KT, 30KT, 40KT Series Vishay Cera-Mite Heavy Duty High Voltage Capacitors 10 TO 40KV MOLDED EPOXY CASE DK GENER

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MTD15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and c

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SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-t

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www.vishay.com 30LV Series Vishay Cera-Mite AC Line Rated Disc Capacitors Class X1, 400 VAC/Class Y2, 300 VAC FEATURES • Complying with IEC 60384-14

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Filters for Communication Equipment Continued from the preceding page. 0.8±0.1 0.15±0.10 Attenuation (dB) Return Loss (dB) 1.6±0.1 A (1) (2) (3) (

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T  echcode® DATASHEET       1.6A 23V Synchronous Rectified Step-Down Converte TD1482 General Description  Features    The TD1482 is a monolithi

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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK,

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STD110N8F6 N-channel 80 V, 0.0056 Ω typ.,80 A, STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(o

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PRODUCT DATASHEET Triple Diffused NPN Transistor Darlington Transistor– KTD1630G HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR KTD1630G is designed to s

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NPN Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fas

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Semiconductor STD1664 NPN Silicon Transistor Description • Medium power amplifier application Features • PC(Collector dissipation)=2W(Ceramic subst

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N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STD10NF10 s s s STD10NF10 VDSS 100 V RDS(on) <0.13 Ω ID 13

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SHINDENGEN Stepping Motor Driver ICs MTD Series MTD1110 FEATURES ●Constant-current chopping function OUTLINE DIMENSIONS Case : ZIP-27 (Unit : mm) (

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www.DataSheet4U.com PD - 5.067A PRELIMINARY GA150TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 150A HALF-BRIDGE

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15DK, 20DK, 30DK, 40DK, 10KT, 15KT, 20KT, 30KT, 40KT Series Vishay Cera-Mite Heavy Duty High Voltage Capacitors 10 TO 40KV MOLDED EPOXY CASE DK GENER

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