SD11740 (Solitron Devices)
1200V SiC N-Channel Power MOSFET
KEY FEATURES
ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B
BENEFITS
PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIEN
Published:
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9 views
SD11806 (Solitron Devices)
Dual 1200V Silicon Carbide Schottky Diode
SD11806
Dual 1200V Silicon Carbide Schottky Diode - 1
KEY FEATURES
VRRM 1200V IF @ 125°C 20A/40A ISOLATED BACKSIDE ZERO REVERSE RECOVERY TO-258 HERME
Published:
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8 views
SD11910 (Solitron Devices)
SiC Half-Bridge Power Module
2
3
1
t’
4 5
6
9 [+] Q1
7 [~] Q2
8 [-]
PIN CONNECTIONS
PIN
DESCRIPTION
1
S1
2
G1
3
Temp. Monitoring
4
Temp. Monitoring
5
G2
6
S2
Published:
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8 views
SD11912 (Solitron Devices)
SiC Dual MOSFET Power Module
PROVISIONAL
Q1 2 [G1]
10 [D1]
3
1 [KS1]
t°
9 [S1] 7 [D2]
Q2 4
5 [G2]
6 [KS2]
8 [S2]
PIN CONNECTIONS
PIN
DESCRIPTION
1
KS1
2
G1
3
Te
Published:
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8 views
SD11957 (Solitron Devices)
SiC Half-Bridge Power Module
9 [+] Q1 2
1
7 [~]
Q2 5
6 8 [-]
PIN CONNECTIONS
PIN
DESCRIPTION
1
S1
2
G1
3
n/c
4
n/c
5
G2
6
S2
7
AC
8
N
9
P
SD11957
SiC Hal
Published:
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8 views
SD11707 (Solitron Devices)
1200V SiC N-Channel Power MOSFET
KEY FEATURES
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS
Published:
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8 views
SD11428 (Solitron Devices)
1200V Silicon Carbide IGBT
SD11428
1200V Silicon Carbide IGBT - 1
KEY FEATURES BVces 1200V Ids (on) @ 125°C 22A TO-3 PACKAGE
BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWE
Published:
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7 views
SD11810 (Solitron Devices)
650V Silicon Carbide Schottky Diode
SD11810
650V Silicon Carbide Schottky Diode - 1
KEY FEATURES
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEP
Published:
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7 views
SD11812 (Solitron Devices)
1200V Silicon Carbide Dual Schottky Doubler Diode
SD11812
1200V Silicon Carbide Dual Schottky Doubler Diode - 1
KEY FEATURES
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING
Published:
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7 views
SD11705 (Solitron Devices)
1200V SiC N-Channel Power MOSFET
KEY FEATURES
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS
Published:
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6 views
SD11801 (Solitron Devices)
1200V Silicon Carbide Schottky Diode
SD11801
1200V Silicon Carbide Schottky Diode - 1
KEY FEATURES
VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING
Published:
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6 views
SD11704 (Solitron Devices)
900V SiC N-Channel Power MOSFET
KEY FEATURES
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 5L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS
Published:
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6 views
SD11461 (Solitron Devices)
N-Channel Power MOSFET
KEY FEATURES
LOW THERMAL RESISTANCE OPTIMIZED FOR FAST SWITCHING TO-258 OR TO-254 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREE
Published:
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6 views
SD11808 (Solitron Devices)
1700V 10A Silicon Carbide Schottky Diode
SD11808
1700V 10A Silicon Carbide Schottky Diode - 1
PROVISIONAL
KEY FEATURES
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCH
Published:
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5 views
SD11710 (Solitron Devices)
700V SiC N-Channel Power MOSFET
KEY FEATURES
ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW G
Published:
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5 views
SD11803 (Solitron Devices)
1200V 10A Silicon Carbide Schottky Diode
SD11803
1200V 10A Silicon Carbide Schottky Diode - 1
KEY FEATURES
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR
Published:
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3 views
SD11902 (Solitron Devices)
SiC Half-Bridge Power Module
2
3
1
t’
4 5
6
9 [+] Q1 D1
7 [~] Q2 D2
8 [-]
PIN CONNECTIONS
PIN
DESCRIPTION
1
S1
2
G1
3
Temp. Monitoring
4
Temp. Monitoring
5
G2
Published:
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3 views
SD11807 (Solitron Devices)
650V Silicon Carbide Schottky Diode
SD11807
650V Silicon Carbide Schottky Diode - 1
KEY FEATURES
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEP
Published:
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2 views