Siemens Semiconductor Group 83 Datasheet | Specifications & PDF Download

BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ) T

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BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type BB 619C Marking Ordering Code yellow S

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NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q Complementary types: BCV

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BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz

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BCR 183 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) Ty

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BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) T

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BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ,R2=10kΩ) Ty

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BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ, R2 = 47k

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Microcomputer Components 16-Bit CMOS Single-Chip Microcontroller SAB 80C166/83C166 Data Sheet 09.94 C16x-Family of High-Performance CMOS 16-Bit Mic

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BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 90

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BPX 80 BPX 82 89 NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays BPX 80 BPX 82 89 Maße in mm, wenn nicht anders angeg

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BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at

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BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10

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Silicon Switching Diode Array SMBD 2837 SMBD 2838 For high-speed switching applications q Common cathode q Type SMBD 2837 SMBD 2838 Marking sA5 sA

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PNP Silicon AF Transistors BCX 51 BCX 53 Features For AF driver and output stages q High collector current q Low collector-emitter saturation vo

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GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 ø0.45 Chip position 1 0.9 .1 1.1 .9 0 ø5.5 ø5.2 2.7 1 2.54 mm spacing 14.5 12.5 3.

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Array LED 2 mm LED, Diffused LR Z18 x, LY Z181, LG Z18 x Besondere Merkmale q q q q eingefärbtes, diffuses Gehäuse als optischer Indikator einsetzb

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