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Siemens Semiconductor Group Q6 Datasheet

Siemens Semiconductor Group Q6

Siemens Semiconductor Group Q6

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Siemens Semiconductor Group

Q62702-C1886 - PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

 · 11 Hits q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz C...
Siemens Semiconductor Group

Q62702-A733 - Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)

 · 10 Hits cified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = ...
Siemens Semiconductor Group

Q62702-A1271 - Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)

 · 8 Hits lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, u...
Siemens Semiconductor Group

Q62702-C1903 - NPN Silicon AF Transistors (For AF driver and output stages High collector current)

 · 8 Hits For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Ty...
Siemens Semiconductor Group

Q62702-A1031 - Silicon Switching Diode Array (For high speed switching applications Common anode)

 · 7 Hits ...
Siemens Semiconductor Group

Q62702-C168 - PNP SILICON TRANSISTOR

 · 7 Hits ...
Siemens Semiconductor Group

Q62702-C2288 - NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)

 · 7 Hits breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 350 50 V 0.3 1.5 2.5 29 1.1 kΩ - VCB = 40 V, IE = 0 Emi...
Siemens Semiconductor Group

Q60218-X62-D - NPN SILICON PLANAR TRANSISTORS

 · 6 Hits ...
Siemens Semiconductor Group

Q62702-A1198 - Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

 · 5 Hits = 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group ...
Siemens Semiconductor Group

Q62702-A121 - Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)

 · 5 Hits ...
Siemens Semiconductor Group

Q62702-A964 - Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)

 · 5 Hits min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 350 430 520 750 µA VR = 25 V, TA = 25 °C VR = 25 V, TA = 85...
Siemens Semiconductor Group

Q62702-C1614 - NPN Silicon AF Transistors (For AF driver and output stages High collector current)

 · 5 Hits For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 51 … BCX 53 (PNP) q Ty...
Siemens Semiconductor Group

Q62702-C2354 - NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)

 · 5 Hits reakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.65 70 V 0.3 1 1.4 2.9 0.24 kΩ - VCB = 40 V, IE = 0 Emit...
Siemens Semiconductor Group

Q62702-C750 - NPN SILICON AF TRANSISTORS

 · 5 Hits ...
Siemens Semiconductor Group

Q60202-C230-S2 - NPN SILICON TRANSISTORS

 · 4 Hits ...
Siemens Semiconductor Group

Q60215-Y111-S4 - Silizium-Fotoelement Silicon Photovoltaic Cell

 · 4 Hits q Especially suitable for applications from 420 nm to 1060 nm q Cathode = back contact q Coated with a humidity-proof protective layer q Binned by spe...
Siemens Semiconductor Group

Q62701-F88 - PNP GERMANIUM RHF TRANSISTOR

 · 4 Hits ...
Siemens Semiconductor Group

Q62702-A1105 - Silicon Schottky Diodes

 · 4 Hits rrent VR = 40 V, TA = 25 °C Forward voltage VF CT RF IF = 2 mA Diode capacitance VR = 0 , f = 1 MHz Differential forward resistance IF = 5 mA, f ...
Siemens Semiconductor Group

Q62702-A1190 - Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)

 · 4 Hits nt Symbol min. Values typ. max. 50 900 µA nA V 0.305 0.38 0.44 0.58 0.4 0.7 Unit IR IR VF - VR = 30 V Reverse current VR = 30 V, TA = 65 °C Forwar...
Siemens Semiconductor Group

Q62702-A688 - Silicon Switching Diode Array (For high-speed switching applications Common anode)

 · 4 Hits 0 V VR = 25 V, TA = 150 ˚C VR = 70 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 m...
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