.
Siemens Semiconductor Group
BAS125-07W - Silicon Schottky Diode
· 9 lues min. DC characteristics Reverse current typ. max. Unit IR 385 530 800 150 200 µA VR = 20 V VR = 25 V Forward voltage VF 400 650 900 mV I F...
Siemens Semiconductor Group
BAS28W - Silicon Switching Diode Array
· 9 F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA IR IR - VR = 75 V Reverse current VR = 25 V, TA = 150 °C VR = 75...
Siemens Semiconductor Group
BAT17W - Silicon Schottky Diodes
· 9 lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, u...
Siemens Semiconductor Group
BA595 - Silicon PIN Diode
· 8 Current-controlled RF resistor for RF attenuators q Frequency range 1 MHz … 2 GHz q Especially useful as antenna switch in TV-sat tuners q Type BA 59...
Siemens Semiconductor Group
BFS483 - NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
· 6 FS 483 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown volt...
Siemens Semiconductor Group
BAR64-02 - Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
· 6 ics Breakdown voltage typ. max. 1.1 Unit V(BR) VF 200 - V mV I (BR) = 5 µA Forward voltage I F = 50 mA AC characteristics Diode capacitance CT ...
Siemens Semiconductor Group
BAT14 - HiRel Silicon Schottky Diode
· 6 ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qua...
Siemens Semiconductor Group
BAT14-043 - HiRel Silicon Schottky Diode
· 6 ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qua...
Siemens Semiconductor Group
BAT15-050D - Silicon Schottky Diode
· 6 D BAT 15-050 D BAT 15-090 D BAT 15-110 D FSSB – – – – rf BAT 15-020 D BAT 15-050 D BAT 15-090 D BAT 15-110 D – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 ...
Siemens Semiconductor Group
BAT17-06 - Silicon Schottky Diode
· 6 oltage IF = 0.1 mA IF = 1 mA IF = 10 mA Diode capacitance VR = 0 V f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Value typ. max. Uni...
Siemens Semiconductor Group
BAT68 - Silicon Schottky Diodes
· 6 – 55 … + 150 Unit V mA mW ˚C 750 590 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm ...
Siemens Semiconductor Group
BAT68-03W - Silicon Schottky Diode
· 6 0 , f = 1 MHz Differential forward resistance IF = 5 mA Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 200 mA IF 160...
Siemens Semiconductor Group
Q62702-A1198 - Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
· 6 = 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group ...
Siemens Semiconductor Group
BFR92P - NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
· 5 5°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 -...
Siemens Semiconductor Group
BFS17W - NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
· 5 05 10 100 20 20 150 V 0.4 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current I...
Siemens Semiconductor Group
BFQ29P - NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
· 5 he pcb. 1) 2) BFQ 29P Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitt...
Siemens Semiconductor Group
BAR64-06W - Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
· 5 aracteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. 50 1.1 Unit V(BR...