Siemens BF1 datasheet

Siemens BF1 dataSheet

Siemens Semiconductor Group

BF1012W - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 4 Hits ...

Siemens Semiconductor Group

BF1005 - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 2 Hits acteristics Drain-source breakdown voltage typ. 100 10 1 max. 12 13 50 1.5 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 8 - V I ...

Siemens Semiconductor Group

BF1012 - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 2 Hits eter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS ...

Siemens Semiconductor Group

BF198 - NPN Silicon RF Transistor

Mar 23, 2005 · 2 Hits ...

Siemens Semiconductor Group

BF1005S - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 1 Hits characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 - V ...

Siemens Semiconductor Group

BF1009 - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 1 Hits meter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS...

Siemens Semiconductor Group

BF1009S - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 1 Hits stics Drain-source breakdown voltage typ. 14 0.9 max. 12 16 60 50 500 19 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 10 - V I ...

Siemens Semiconductor Group

BF1012S - Silicon N-Channel MOSFET Tetrode

Mar 23, 2005 · 1 Hits characteristics Drain-source breakdown voltage typ. 12 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 -...

Siemens

BF179A - Silicon NPN Transistor

May 21, 2024 · 1 Hits ...

Siemens

BF179B - Silicon NPN Transistor

May 21, 2024 · 1 Hits ...

Siemens

BF179C - Silicon NPN Transistor

May 21, 2024 · 1 Hits ...

Since 2006. D4U Semicon. | Contact Us | Privacy Policy