STMicroelectronics STM Datasheet | Specifications & PDF Download

Z01 Datasheet Standard 1 A Triacs A2 G A1 A2 A1 A2 G SOT-223 A1 G A2 TO-92 A2 A1 G SMBflat-3L Features • On-state rms current, IT(RMS) 1 A • Re

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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STM32F103x8 STM32F103xB Medium-density performance line ARM®-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces D

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TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features „ Multipower BCD technology „ Very high operating voltage range (±50

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STM32F405xx STM32F407xx Arm® Cortex®-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interf

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LM217, LM317 Datasheet 1.2 V to 37 V adjustable voltage regulators TO-220 D²PAK TO-220FP SOT223 Product status link LM217 LM317 Features • Output

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LM217L, LM317L Low current 1.2 to 37 V adjustable voltage regulators TO-92 Bag TO-92 Tape and reel Ammopack SO-8 Features • Outuput voltage range

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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LM217M, LM317M Datasheet Medium current 1.2 to 37 V adjustable voltage regulator DPAK SOT223 Features • Output voltage range: 1.2 to 37 V • Output

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VIPer22ADIP ® VIPer22AS LOW POWER OFF LINE SMPS PRIMARY SWITCHER TYPICAL POWER CAPABILITY Mains type SO-8 European (195 - 265 Vac) 12 W US /

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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TO-92 SO-8 SOT-89 L78L Datasheet Positive voltage regulators Features • Output current up to 100 mA • Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 1

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TL074 Low-noise JFET quad operational amplifier D SO14 (plastic micropackage) Output 1 1 Inverting Input 1 2 - Non-inverting Input 1 3 + VCC +

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TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet - production data ' 0'03  Flexiwatt25 (Horizontal) ' 0'03  Flexiwatt25 (Ver

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2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized

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IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) IRF540 100 V <0.077 Ω s TYPICAL RDS(on)

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OP07 Very low offset single bipolar operational amplifier Features ■ Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drif

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STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008

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N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE) TYPE STW20NM50FD www.DataSheet4U.com s TYPICAL s s s s s STW20NM50FD VDSS

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ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot s

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