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S ta tic R a m M O D U LE M EM O R Y M O D U LE S R a m 4 M x 8 -B G A 3D S R 32M 08V B 2368 3 2 M b it S R a m o r g a n iz e d a s 4 M x 8 , b a s

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CD40100BMS December 1992 CMOS 32-Stage Static Left/Right Shift Register Description CD40100BMS is a 32-Stage shift register containing 32 D-type mast

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HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM 7025S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 7008S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 7008S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM 7007L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ◆

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HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM 7006S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM 7025S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM 7006S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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HIGH-SPEED 8K x 18 DUAL-PORT STATIC RAM 7035L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ◆

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HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM 70V261S/L Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory

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sales.Mr.wang13826508770 www.sztssd.com 1µA YX2117 July 2021 - REVISED May 2022  ，1µA  ：3.0V~5.1V  5.1V/3.6V/3.3V/3.0V  94%      

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82C85 CMOS Static Clock Controller/Generator Features • Generates the System Clock For CMOS or NMOS Microprocessors and Peripherals • Complete Contro

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mos IM S 16 00 IM S 1601L CMOS High Performance 64K x 1 Static RAM FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rul

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INTEGRATED CIRCUITS M 2102A M 2102AL - BIT STATIC RANDOM ACCESS MEMORY POWER SUPPLY V cc= 5V TTL COMPATIBLE ALL INPUTS AND OUTPUTS THREE-STATE OUTPU

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