.
ST Microelectronics
STD5NK60Z - N-CHANNEL Zener-Protected SuperMESH Power MOSFET
· 12 TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z ■ ■ ■ ■ ■ ■ Figure 1: Package Id 5A 5A 5A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS@ TJmax 650 V 650 V 650 V RDS(on...
STMicroelectronics
9NM60N - STD9NM60N
· 11 Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance an...
ST Microelectronics
STD60NF3LL - N-CHANNEL POWER MOSFET
· 9 Size ™” strip-based process. The resulting transistor shows the best trade-off between onresistance ang gate charge. When used as high and low side in...
SamHop Microelectronics
STD3055NL - N-Channel E nhancement Mode Field Effect Transistor
· 9 /W S T U/D3055NL E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Volt...
STMicroelectronics
65NF06 - STD65NF06
· 9 Type STD65NF06 STP65NF06 ■ ■ VDSS 60V 60V RDS(on) <14mΩ <14mΩ ID 60A 60A 3 1 1 2 3 Standard level gate drive 100% avalanche tested DPAK TO-220 D...
ST Microelectronics
STD20NF06 - N-CHANNEL MOSFET
· 8 Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and l...
ST Microelectronics
STD1NK60 - N-CHANNEL POWER MOSFET
· 8 PE STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP MARKING D1NK60 D1NK60 1HNK60R 1HNK60R PACKAGE DPAK IPAK TO-92 TO-92 PACKAGING TAPE & REEL TUBE BULK ...
ST Microelectronics
STD8N06 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
· 8 tinuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temper...
STMicroelectronics
STD3N30L - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
· 8 ous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperatur...
SamHop Microelectronics
STD20N15 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
· 8 Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO...
STMicroelectronics
STD2805T4 - Low voltage fast-switching PNP power transistor
· 8 • Very low collector-emitter saturation voltage • High current gain characteristic • Fast-switching speed Applications • CCFL drivers • Voltage regula...
SamHop Microelectronics
STD3055L - N-Channel Logic Level E nhancement Mode F ield E ffect Transistor
· 7 .co m 1 www.DataSheet4U.com S T U/D3055L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Dr...
STMicroelectronics
STD2NK100Z - N-channel Power MOSFET
· 7 Order code VDS STD2NK100Z 1000 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max....
ST Microelectronics
STD1HNC60 - N-CHANNEL POWER MOSFET
· 6 0°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junctio...
STMicroelectronics
STD2N80K5 - N-channel Power MOSFET
· 6 Order codes STD2N80K5 STF2N80K5 STP2N80K5 STU2N80K5 VDS 800 V RDS(on)max 4.5 Ω ID 2A PTOT 45 W 20 W 45 W • Industry’s lowest RDS(on) * area • In...
ST Microelectronics
STD90N03L - N-Channel Power MOSFET
· 6 Type STD90N03L STD90N03L-1 ■ ■ ■ ■ VDSS 30V 30V RDS(on) 0.0057Ω 0.0057Ω ID 80A (1) 80A (1) 3 2 1 1 3 1. Pulse width limited by safe operating are...
ST Microelectronics
STD20NF06L - N-channel Power MOSFET
· 6 Order code VDS RDS(on) max. ID STD20NF06L 60 V 40 mΩ 24 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applicati...
ST Microelectronics
STD65N55F3 - N-CHANNEL Power MOSFET
· 6 Type STD65N55F3 VDS 55 V RDS(on) max. 8.5 mΩ ID 80 A PTOT 110 W • AEC-Q101 qualified • 100% avalanche tested Applications • Switching applicatio...
ST Microelectronics
STD38NF03L - N-CHANNEL MOSFET
· 6 Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and ...
STMicroelectronics
STD3N25 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
· 6 T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. ...