SS2 Datasheet | Specifications & PDF Download

SS215 THRU SS220 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Un

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DIP 14 SERIES REED RELAYS MSS2 s MSS7 s PRMA s DSS7 s PRME s MVS2 s MVS7 DESCRIPTION CP Clare’s epoxy molded DIP 14 Series offers a variety of contac

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® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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MOSEL VITELIC INC. preliminary MSS2105/S3205/S4305/S6605 21 /32 /43 /60 VOICE ROM Matrix addressing mode: a. 56 sentences can be accessed by 8x7 w

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MSS20-xxx-x Series Zero Bias Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Devices

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PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NP

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PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General

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® WON-TOP ELECTRONICS SS2020FL – SS20100FL 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching  PN Junc

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PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 22 February 2018 Product data sheet 1. General description Low VCEsat NPN transistor in a S

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SS22F - SS210F SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 2.0 A Features Schottky Barrier Chip Ideally Suited for Au

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DIP 14 SERIES REED RELAYS MSS2 s MSS7 s MVS2 s MVS7 DESCRIPTION REMtech’s epoxy molded DIP 14 Series offers a variety of contacts and schematics

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product specification Supersedes data of 200

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