® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

www.DataSheet4U.com www.DataSheet4U.com

1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

1SS244 Diodes Switching diode 1SS244 Applications High voltage switching General purpose rectification External dimensions (Units : mm) CATHODE BA

SS215 THRU SS220 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Un

1SS270A SILICON EPITAXIAL PLANAR H IGH SPEED SWITCHING DIODE Features • Low capacitance. (C=3.0pF max.) • Short reverse recovery time. (trr = 3.5ns ma

1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

Features * Low capacitance * Short reverse recovery time * High reliability * High-speed switching 1SS270A Silicon Epitaxial Planar Switching Diode

SS24 2A, Schottky Barrier Diode SS24 Http//:www.sh-willsemi.com Features  Schottky barrier rectifier  Guarding protection  Low forward voltage 

NOT RECOMMENDED FOR NEW DESIGNS USE SS22-LTP~SS210-LTP SERIES MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Ch

Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Produc

OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to

OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to

AOSS21319C 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Complian

1SS226 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

www.DataSheet4U.com

Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/

1SS270A SILICON EPITAXIAL PLANAR DIODE Features Low capacitance Short reverse recovery time High reliability Mechanical Data Case: DO-35, gla

PBSS2540M-Q 40 V, 0.5 A NPN low VCEsat transistor 21 July 2025 Product data sheet 1. General description NPN low VCEsat transistor in a SOT883 small