SSM9435GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
DESCRIPTION
The SSM9435GM acheives fast switching performance wit
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GSM900 (Hitachi)
(GSM850 / GSM900) Antenna Switch Module
The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par
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MSM9520RS (ETC)
Custom Integrated Circuit Replacement Module
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MSM9831-xxx (OKI electronic componets)
VOICE SYNTHESIS LSI with on-chip 384Kbit MASK ROM
E2D0097-19-94
¡ Semiconductor MSM9831-xxx
¡ Semiconductor VOICE SYNTHESIS LSI with on-chip 384Kbit MASK ROM
This version: Sep. 1999 MSM9831-xxx
GEN
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SM945 (OEI)
NPN Silicon Transistor
www.DataSheet4U.com
SM945
NPN Silicon Transistor
FEATURES TO-92 Collector-Base Voltage VCBO = 60V Complement to SM733
1. Emitter
2. Collector
3.
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RF3146 (RF Micro Devices)
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
Preliminary 0
Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Descript
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SM9G (Silicon Microstructures)
SO-16 Pressure Sensor
Uncompensated SO-16 Pressure Sensor
SM9D, SM9G Series
FEATURES
• Uncompensated millivolt analog output • Differential or gage pressure options • Verti
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MSM942038-24 (MPS)
Smart Motor
MSM942038-24
eMotion SystemTM Smart Motor Family
Position/Speed/Torque Mode
FEATURES
The MSM942038-24 is part of a family of fully integrated smart m
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SSM9975GM (VBsemi)
Dual N-Channel 60V MOSFET
SSM9975GM-VB
SSM9975GM-VB Datasheet Dual N-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.012 at VGS = 10 V 60
0.
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SSM9475M (Silicon Standard)
N-channel Enhancement-mode Power MOSFET
SSM9475M N-channel Enhancement-mode Power MOSFET
Simple drive requirement Lower gate charge Fast switching characteristics
G
D S
BVDSS R DS(ON) ID
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SSM9972GS (Silicon Standard)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9972GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge Simple drive requirement Fast switching
Description
D
G S
The SSM9972GS is in a
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CX77301 (Skyworks Solutions)
PA Module Dual Band EGSM900 DCS1800
a D . APPLICATIONS w w w
FEATURES
S PA Module Dual-band EGSM900 DCS1800 / GPRS CX77301: a t
• Dual-band cellular handsets
DATA SHEET
e e h
U 4 t
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GSM850 (Hitachi)
(GSM850 / GSM900) Antenna Switch Module
The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par
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SSM9585GM (Silicon Standard)
P-Channel MOSFET
SSM9585GM
P-channel Enhancement-mode Power MOSFET
Simple drive requirement Lower gate charge Fast switching characteristics
Pb-free; RoHS compliant.
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TSM900N06CP (Taiwan Semiconductor)
N-Channel Power MOSFET
TSM900N06CP
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 11A, 90mΩ
FEATURES
● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ●
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SSM9971GJ (Silicon Standard)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9971GH,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge Simple drive requirement Fast switching
Description
D
G S
The SSM9971GH is in a
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TSM9409 (Taiwan Semiconductor Company)
60V P-Channel MOSFET
TSM9409
60V P-Channel MOSFET
SOP-8
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
PRODUCT SUMMAR
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RF3196 (RF Micro Devices)
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
RF3196
www.DataSheet4U.com
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
RoHS Compliant and Pb-Free Product Package Style: Module, 6mm x6mm
Featu
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TSM9119 (Touchstone Semiconductor)
1.6V Nanopower Comparators
TSM9117-TSM9120
1.6V Nanopower Comparators with/without Internal References FEATURES
♦ Second-source for MAX9117-MAX9120 ♦ Guaranteed to Operate Down
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SSM9926 (South Sea Semiconductor)
Dual N-Channel MOSFET
SSM9926
Dual N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V
SO-8
FEATURES
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