SM9 Datasheet | Specifications & PDF Download

E2D0097-19-94 ¡ Semiconductor MSM9831-xxx ¡ Semiconductor VOICE SYNTHESIS LSI with on-chip 384Kbit MASK ROM This version: Sep. 1999 MSM9831-xxx GEN

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Preliminary 0 Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Descript

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The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

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SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

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www.DataSheet4U.com SM945 NPN Silicon Transistor FEATURES TO-92 Collector-Base Voltage VCBO = 60V Complement to SM733 1. Emitter 2. Collector 3.

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The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

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TO-251S (IPAK SL) SOT-223 TSM900N06 60V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance

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Elektronische Bauelemente SSM9577-C -3.8A, -60V, RDS(ON) 85mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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GSM850/GSM900/DCS/PCS Quad Band Antenna Switch Module LX-Q615S2 Electrical Characteristics GSM Tx Mode Insertion Loss, ATT and Impedance 24 Feb 2003 1

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MITSUBISHI SEMICONDUCTOR BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module Specification are subject to change w

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SAW Filter for ISM Band MODEL TSM915AW-6 1. ELECTRICAL CHARACTERISTICS : Ta = -20 to +70 ℃ As of May. 8, 2001 ITEM Nominal I/O Impedance www.DataShee

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AWT6108R GSM850/GSM900/DCS/PCS www.DataSheet4U.com Quad Band Power Amplifier Module With Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.0 FE

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RF7161QuadBand GSM850/EGS M900/DCS18 00/ RF7161 QUAD-BAND GSM850/EGSM900/DCS1800/ PCS1900 TRANSMIT MODULE Package: Module 6.63mmx5.24mm1.0mm TX ENAB

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SM9989DSQG ® Dual N-Channel Enhancement Mode MOSFET Features • 20V/12.4A, RDS(ON)= 15mΩ (Max.) @ VGS=4.5V R= DS(ON) 16mΩ (Max.) @ V =4V GS R

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TSM950N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 6.5A, 95mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS co

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TSM900N06CH Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ●

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E2B0045-27-Y3 ¡ Semiconductor ¡ Semiconductor MSM9006-01, -02 LCD Driver with Keyscan Function This version: Nov. 1997 MSM9006-01, -02 Previous vers

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E2B0045-27-Y3 ¡ Semiconductor ¡ Semiconductor MSM9006-01, -02 LCD Driver with Keyscan Function This version: Nov. 1997 MSM9006-01, -02 Previous vers

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E2B0015-27-Y2 ¡ Semiconductor MSM9004-03/04 ¡ Semiconductor This version: Nov. 1997 MSM9004-03/04 Previous version: Mar. 1996 1/4 DUTY LCD DRIVER W

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