SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

SSM9975GM-VB SSM9975GM-VB Datasheet Dual N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 60 0.

The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

www.DataSheet4U.com SM945 NPN Silicon Transistor FEATURES TO-92 Collector-Base Voltage VCBO = 60V Complement to SM733 1. Emitter 2. Collector 3.

SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V SO-8 FEATURES

SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9971GH is in a

SSM9435GM-VB SSM9435GM-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = - 10 V - 30

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID 20V 30mΩ 6A Pb-free; RoHS-compliant SO-8 D2 D2 D1 D1 SO

SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications Descript

TSM900N06CP Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ●

SSM9408GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic D G S DE

PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9971 prov

SSM9926A Comman Drain Dual N-Channel Enhancement Mode MOSFET Product Summary 8 SOP-8 7 6 5 VDS (V) ID (A) RDS(ON) (m ) Max 30 @VGS = 4.0V 20V 6

SSM9475M N-channel Enhancement-mode Power MOSFET Simple drive requirement Lower gate charge Fast switching characteristics G D S BVDSS R DS(ON) ID

Preliminary 0 Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Descript

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package G2 S2 S2 D2

SSM9435 Elektronische Bauelemente www.DataSheet4U.com -6A, -30V,RDS(ON) 50m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Desc