SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

www.DataSheet4U.com SM945 NPN Silicon Transistor FEATURES TO-92 Collector-Base Voltage VCBO = 60V Complement to SM733 1. Emitter 2. Collector 3.

The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

SSM9975GM-VB SSM9975GM-VB Datasheet Dual N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 60 0.

SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9971GH is in a

SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9972GS is in a

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V SO-8 FEATURES

TSM900N06CP Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ●

Preliminary 0 Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Descript

SSM9435 Elektronische Bauelemente www.DataSheet4U.com -6A, -30V,RDS(ON) 50m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Desc

RF3196 www.DataSheet4U.com QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant and Pb-Free Product Package Style: Module, 6mm x6mm Featu

Uncompensated SO-16 Pressure Sensor SM9D, SM9G Series FEATURES • Uncompensated millivolt analog output • Differential or gage pressure options • Verti

SSM9435GM-VB SSM9435GM-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = - 10 V - 30

SSM9475M N-channel Enhancement-mode Power MOSFET Simple drive requirement Lower gate charge Fast switching characteristics G D S BVDSS R DS(ON) ID

SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching Description D SOT-223 S D G Advanced Po

E2D0097-19-94 ¡ Semiconductor MSM9831-xxx ¡ Semiconductor VOICE SYNTHESIS LSI with on-chip 384Kbit MASK ROM This version: Sep. 1999 MSM9831-xxx GEN

a D . APPLICATIONS w w w FEATURES S PA Module Dual-band EGSM900 DCS1800 / GPRS CX77301: a t • Dual-band cellular handsets DATA SHEET e e h U 4 t