SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

SSM9975GM-VB SSM9975GM-VB Datasheet Dual N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 60 0.

SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9435GM acheives fast switching performance wit

The of is of Thecontents contents ofthis thisdocument document isthe theproperty property ofHitachi HitachiMetals MetalsLtd. Ltd.and and may be to par

SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V SO-8 FEATURES

www.DataSheet4U.com SM945 NPN Silicon Transistor FEATURES TO-92 Collector-Base Voltage VCBO = 60V Complement to SM733 1. Emitter 2. Collector 3.

SSM9435GM-VB SSM9435GM-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = - 10 V - 30

SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9971GH is in a

SSM9408GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic D G S DE

SSM9972GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S The SSM9972GS is in a

SSM9435 Elektronische Bauelemente www.DataSheet4U.com -6A, -30V,RDS(ON) 50m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Desc

SSM9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9971 prov

TSM900N06CP Taiwan Semiconductor N-Channel Power MOSFET 60V, 11A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ●

SSM9406GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 30V 18mΩ 9A Pb-free; RoHS-compliant SO-8 D D D D SO-8 G S SS

SSM9435K P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching Description D SOT-223 S D G Advanced Po

Preliminary 0 Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Descript

SSM9435GH,J P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package G2 S2 S2 D2

SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications Descript