Renesas Technology 2SK Datasheet | Specifications & PDF Download

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V g

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency an

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2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resista

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency an

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www.DataSheet4U.com 2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005 Application High speed power sw

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www.DataSheet4U.com 2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency an

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency an

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.Data

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Compleme

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2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS(on) =

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2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%mi

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2SK3446 Silicon N Channel Power MOS FET Power Switching Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5

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www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N Channel MOS FET REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 Application High speed

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2SK1762 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesa

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2SK2393 Silicon N Channel MOS FET Application High voltage / High speed power switching Features • Low on-resistance, High breakdown voltage • High sp

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2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features • Capable of 4 V gat

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