Siemens Semiconductor Group
Q62702-C1501 - NPN Silicon Darlington Transistors (For general AF applications High collector current)
· 2 Hits istics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 27 BCV 4...
Siemens Semiconductor Group
Q62702-C1504 - PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
· 2 Hits power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 807 B...
Siemens Semiconductor Group
Q62702-C1505 - NPN Silicon AF Transistors
· 2 Hits l power dissipation, TC = 79 ˚C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 817 ...
Siemens Semiconductor Group
Q62702-C1502 - PNP Silicon AF Transistors
· 1 Hits For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 54 … BCX 56 (NPN) q Ty...
Siemens Semiconductor Group
Q62702-C1506 - NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
· 1 Hits q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz C...
Siemens Semiconductor Group
Q62702-C1507 - PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
· 1 Hits q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz C...