Panasonic MIP Datasheet | Specifications & PDF Download

インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS  　  のを  のをに  になを の, にえ, (フ の ) とを  　  ( ほか )  ACアダプタ  Ta = 25°C±3°C ドレイン VCC VDD フィード

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www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply （MIP531) „ Overview MIP531 supporting

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MIP2M20MS Silicon MOS FET type integrated circuit  Features  AC input detecting function By connecting SO terminal, it is able to select functions

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High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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MIP2E2DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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(IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13

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www.DataSheet4U.com (IPD) MIP2E5DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2

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Product Standards MIP2L30MTSCF Type Application Structure Equivalent Circuit Out Line Silicon MOSFET type Integrated Circuit For Switching Power Su

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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Featuring built-in frequency jitter necessary for EMI, while also conserving power during standby High-Performance IPD with Frequency Jitter for Sma

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MIP2E1DMU MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 VC 10 ID 0.43 IDP 0.61 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ • U-G4 • 1: Contro

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Intelligent Power Devices (IPDs) MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY Silicon MOS IC s Features q Single chip

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www.DataSheet4U.com (IPD) MIP289 MOS I • • , • IPD • 150 µA , , , IPD 1 2 3 4 6.3±0.2 Unit : mm +0 0.25 –0.05 MOSFET CMOS , 9.4±0.3 8 7 5 .10

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MIP2E7DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 3.5 A IDP 4.9 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A2 •

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Intelligent Power Devices (IPDs) MIP805 Silicon MOS IC s Features q Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS

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MIP3E3SMY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control Max. duty

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