PDP Datasheet | Pinout, Features, Price Comparison & PDF

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

80V N-Channel MOSFETs PDP8974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Ene

FGPF4536 — 360 V PDP Trench IGBT FGPF4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC =

PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Features Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Ene

PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Ene

FGPF4633 — 330 V PDP Trench IGBT FGPF4633 330 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC =

100V P-Channel MOSFETs PDP0959 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

60V N-Channel MOSFETs PDP6906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PD - 96131A PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Application

PDP TRENCH IGBT PD - 97132 IRGP4086PbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 300 V l Optimized for Sustain and Ene

60V N-Channel MOSFETs PDP6960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

DST847BPDP6 45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963 Features  NPN & PNP Complementary SS  BVCEO > 45V  IC = 100mA High Collector Curre

PDP Division, LG Electronics Inc. Product Specification of PDP Module CUSTOMER APPROVAL SPECIFICATION (● ) Preliminary Specification ( ) Final Speci

PD - 97058B PDP TRENCH IGBT IRGB4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appli

www.DataSheet4U.com ® STTH40P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF(AV) VRRM VFP (typ) IRM (typ) Tj V

PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD160300 www.DataSheet4U.com 192-BIT AC-PDP DRIVER DESCRIPTION The µ PD160300 is a high-wi

PDP TRENCH IGBT PD - 97132 IRGP4086PbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 300 V l Optimized for Sustain and Ene

65V N-Channel MOSFETs PDP6974-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

STTH60P03S Ultrafast rectifier PDP energy recovery Features  Ultrafast recovery allowing high sustain frequency  Decrease charge evacuation time i