ON Semiconductor PZT Datasheet | Specifications & PDF Download

NTNUS3171PZ Small Signal MOSFET −20 V, −200 mA, Single P−Channel, 1.0 x 0.6 mm SOT−1123 Package Features • Single P−Channel MOSFET • Offers a Low RD

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PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Re

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MPSA55 / MMBTA55 / PZTA55 MPSA55 MMBTA55 C PZTA55 C E C B TO-92 E SOT-23 Mark: 2H B SOT-223 B C E PNP General Purpose Amplifier This devic

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NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: PZTA 9

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FDMA6023PZT Dual P-Channel PowerTrench® MOSFET February 2009 FDMA6023PZT www.datasheet4u.com Dual P-Channel PowerTrench® MOSFET -20 V, -3.6 A, 60 m

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FDME910PZT P-Channel PowerTrench® MOSFET FDME910PZT P-Channel PowerTrench® MOSFET -20 V, -8 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = -4.5 V,

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MOSFET – Dual P-Channel POWERTRENCH) -20 V, -2.6 A, 142 mW FDME1023PZT Description This device is designed specifically as a single package solution

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FDME510PZT P-Channel PowerTrench® MOSFET FDME510PZT P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ Features „ Max rDS(on) = 37 mΩ at VGS = -4.5 V,

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NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complement

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NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: P

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DATA SHEET www.onsemi.com NPN Silicon Planar Epitaxial Transistor PZT2222A This NPN Silicon Epitaxial transistor is designed for use in linear and

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MOSFET – P-Channel POWERTRENCH) -20 V, -8 A, 24 mW FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q General Description This device is designed specifically

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PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: PZTA 4

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MOSFET – P-Channel POWERTRENCH) -20 V, -8 A, 24 mW FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q General Description This device is designed specifically

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PNP Silicon Switching Transistor High DC current gain 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: PZT 3904 (NPN)

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MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier October 2014 MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Features • This device is

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is desi

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PNP General-Purpose Amplifier PZTA56, MMBTA56 General Description This device is designed for general−purpose amplifier applications at collector cur

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