ON Semiconductor PZT Datasheet | Specifications & PDF Download

FDMA6023PZT Dual P-Channel PowerTrench® MOSFET February 2009 FDMA6023PZT www.datasheet4u.com Dual P-Channel PowerTrench® MOSFET -20 V, -3.6 A, 60 m

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MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier September 2014 MPSA06 / MMBTA06 / PZTA06 NPN General-Purpose Amplifier Features • This d

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NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: P

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MPSA14 / MMBTA14 / PZTA14 Discrete POWER & Signal Technologies MPSA14 MMBTA14 C PZTA14 C E C B E C B TO-92 E SOT-23 Mark: 1N B SOT-223 NPN

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MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier October 2014 MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Features • This device is

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NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: PZTA 9

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MPSA55 / MMBTA55 / PZTA55 MPSA55 MMBTA55 C PZTA55 C E C B TO-92 E SOT-23 Mark: 2H B SOT-223 B C E PNP General Purpose Amplifier This devic

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FDMA6023PZT Dual P-Channel PowerTrench® MOSFET FDMA6023PZT Dual P-Channel PowerTrench® MOSFET -20 V, -3.6 A, 60 mΩ Features „ Max rDS(on) = 60 mΩ

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PNP General-Purpose Amplifier PZTA56, MMBTA56 General Description This device is designed for general−purpose amplifier applications at collector cur

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PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS

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PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Re

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PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Re

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NPN Silicon Planar Epitaxial Transistor PZT651 This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The

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FDME510PZT P-Channel PowerTrench® MOSFET FDME510PZT P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ Features „ Max rDS(on) = 37 mΩ at VGS = -4.5 V,

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FDME910PZT P-Channel PowerTrench® MOSFET FDME910PZT P-Channel PowerTrench® MOSFET -20 V, -8 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = -4.5 V,

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NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q Complement

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MMBT2222A / PZT2222A — NPN General-Purpose Amplifier July 2014 MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use

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PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A Discrete POWER & Signal Technologies PN2907A MMBT2907A C PZT2907A C E C B E C B TO-92 E SO

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PNP Silicon Epitaxial Transistor PZT2907A This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device

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