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，。 Silicon epitaxial process to produce ultrafast recovery diode with low reverse leakage current and high reliability.
/ Applications
、、，。 For hi...
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Glass Passivated Die Construction Ideally Suited for Automatic Assembly Super-Fast Recovery Time High Voltage Capability Low Power Loss, Hig...
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Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Applicat...
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·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low fo...
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Package Designed for Power Surface Mount Applications Ultrafast 60 Nanosecond Recovery Times 175°C Operating Junction Temperature Epoxy Meets UL94, V...
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• Package Designed for Power Surface Mount Applications • Ultrafast 60 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Epoxy Meets ...
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