Features  BVCEO > 40V  IC = 600mA Collector Current  Epitaxial Planar Die Construction  Ultra-Small Surface Mount Package  Complementary PNP Type

Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBT2907AT). z C

MMBT2222AT Rev.E Nov.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features IC 600mA 。

Elektronische Bauelemente MMBT2222AT NPN Silicon General Purpose Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. The

MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volt POWER 225 mWatt FEATURES • NPN epitaxial silicon, planar design • Collector-e

MMBT2222AT — NPN Epitaxial Silicon Transistor MMBT2222AT NPN Epitaxial Silicon Transistor Features • General purpose amplifier transistor. • Ultra-Sm

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. The

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MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon P b Lead(Pb)-Free MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emit

RoHS MMBT2222AT MMBT2222AT TRANSISTOR (NPN) SOT-523 FEATURES 1. BASE Power dissipation PCM: 0.15 W (Tamb=25℃) DCollector current ICM: 0.6 A

Elektronische Bauelemente MMBT2222AT-C 0.6A, 75V NPN Silicon General Purpose Transistors RoHS Compliant Product A suffix of “-C” specifies halogen &

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. The