TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

LM3200 Miniature, Adjustable, Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers November 2005 LM3200 Miniature, Adjustable, Step-D

www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com DataShee DataShe

® TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additi

VS2310/VS2000 Family Data Sheet Version 3.6 VS2310/VS2000 Family Datasheet Important Notice This datasheet contains proprietary information on the VS

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t

2003 THRU 2024 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Ideally suited for interfacing between low-level

ALC1200 (PN: ALC1200-VD1-CG) 7.1+2 CHANNEL HD AUDIO CODEC WITH CONTENT PROTECTION DATASHEET Preliminary version Rev. 0.11 26th July 2018 Realtek S

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High

ULN2003,04APG/AFWG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic ULN2003APG,ULN2003AFWG ULN2004APG,ULN2004AFWG 7-ch Darlington Sink D

2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943

ULN2001A/ULN2001D ULN2001A ULN2001D 、 ULN2001A/ULN2001D 、 ， 。， 、。 500mA 。 。 、、(LED)、 。 ULN2001A/ULN2001D 2.7K ， 5V TTL/CMOS ， 。 1B 2B 3B ，U

TDA2007A 6 + 6W STEREO AMPLIFIER . . . . HIGH OUTPUT POWER HIGH CURRENT CAPABILITY AC SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION DESCRIPT

NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30

IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

EUP3453 3A,40V,200KHz Step-Down Converter DESCRIPTION The EUP3453 is current mode, step-down switching regulator capable of driving 3A continuous load

ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well su

UTC2003 S w w a10W CAR RADIO AUDIO D . AMPLIFIER w DESCRIPTION The UTC2003 has improved performance with the same pin configuration as the UTC2002.

SFR16S20T/F_Datasheet 16A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR16S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s