MI-200 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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LM3200 Miniature, Adjustable, Step-Down DC-DC Converter with Bypass Mode for RF Power Amplifiers November 2004 LM3200 Miniature, Adjustable, Step-Do

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® TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additi

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2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943

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www.DataSheet4U.com ® ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PA

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MIX2002 2.5W AB MIX2002AB。5V ，THD+N=10%，42.5W 。 MIX2002THD 。， PCB。 MIX2002，。 。POP ，。 MIX2002SOP8  ： －2.5W (VDD=5.0V, RL =4Ω，THD+N=10%) －1.3W

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ULN2003,04APG/AFWG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic ULN2003APG,ULN2003AFWG ULN2004APG,ULN2004AFWG 7-ch Darlington Sink D

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ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well su

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www.DataSheet4U.com MD2001FX High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ State-of-the-art technology: –

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Agent: Hi-Rel (Hong Kong) d

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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www.DataSheet4U.com Spice Model X200UFG P a rt Number Working Reverse Voltage (Vrwm) Average Rectified Current (Io ) Reverse Current @ Vrwm (Ir)

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STB200N6F3, STI200N6F3 STP200N6F3 N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET Features Type STB200N6F3 STI200N6F3 STP200

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 01

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