KTD Datasheet | Specifications & PDF Download

PRODUCT DATASHEET Triple Diffused NPN Transistor Darlington Transistor– KTD1630G HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR KTD1630G is designed to s

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output

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SEMICONDUCTOR TECHNICAL DATA KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. FEATURES High hFE : 5

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SEMICONDUCTOR TECHNICAL DATA KTD2854 EPITAXIAL PLANAR NPN TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMP

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SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max

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kinetic technologies KTD2598 38V/26V Step-Up LED Driver with PWM/ ExpressWire™ Control Features  Wide output range: up to 10 series LEDs  Integra

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NPN Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fas

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SMD Type NPN Transistors KTD1898 Transistors ■ Features ● Small Flat Package ● General Purpose Application 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.

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DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

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DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

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DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

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Elektronische Bauelemente KTD2058 3A, 60V P Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free F

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KTD2060 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features hFE , KTB1368

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌLow Collector-Emitter Saturation Voltage. : VCE(sat)=2.0V(Max.) ᴌComplementary to

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isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD718 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Lineari

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to KTB817. ᴌRecommended for 60W Audio Frequency Amplifier Outpu

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SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTB1151

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SEMICONDUCTOR TECHNICAL DATA KTD2499 TRIPLE DIFFUSED NPN TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION. FEATURES High Voltage : VCBO 1500V. Low

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DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

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