PRODUCT DATASHEET Triple Diffused NPN Transistor Darlington Transistor– KTD1630G HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR KTD1630G is designed to s

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to KTB817. ᴌRecommended for 60W Audio Frequency Amplifier Outpu

DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

KTD2060 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features hFE , KTB1368

SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURE

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary t

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 45ᴕ50W Audio Frequency Amplifier Output Stage. ᴌComplementary

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation.

J BL E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌHigh DC Current Gain : hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe

DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS NTDSeries RCRoomoHpHlSiaSn2t ◆FEATURES 1. Small in size and wide capacitance range. Max. 470µF is a

SEMICONDUCTOR TECHNICAL DATA RELAY DRIVE, HAMMER DIRVE, LAMP DRIVE. STROBO, DC-DC CONVERTER, MOTOR DRIVE. FEATURES ᴌLow Saturation Voltage. : VCE(sat)

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit) FEATURES ᴌLow VCE(SAT). ᴌHigh Performance at Low Suppl

kinetic technologies KTD2598 38V/26V Step-Up LED Driver with PWM/ ExpressWire™ Control Features  Wide output range: up to 10 series LEDs  Integra

NPN Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fas

KTD1302 TRANSISTOR (NPN) FEATURES z Small Flat Package z Audio Muting Application z High Emitter-Base Voltage SOT-89-3L 1. BASE 2. COLLECTOR 3. EMI

SEMICONDUCTOR TECHNICAL DATA KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. FEATURES High hFE : 5