SKD502T (CR Micro)
SkyMOS1 N-MOSFET
SKD502T, SKSS055N08N
SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A
Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Ex
(111 views)
US1JF (KD)
SURFACE MOUNT ULTRA FAST RECTIFIER
US1AF THRU US1MF
SURFACE MOUNT ULTRA FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
● Glass Passivated Die C
(83 views)
MB10M (KD)
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
MB1M THRU MB10M
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage - 100 to 1000 Volts Forward Current - 0.8 Ampere
FEATURES
● Surge overloa
(63 views)
KD338 (Tesla Elektronicke)
Transistor
(39 views)
KD503 (Tesla)
AF Power Transistor NPN
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600D126F075KD4 (Vishay)
Aluminum Capacitor
www.vishay.com
600D
Vishay Sprague
Aluminum Capacitors Miniature, Axial Lead, High Reliability
FEATURES
• Life test 2000 h at +125 °C
• Wide temp
(23 views)
GP8NC60KD (STMicroelectronics)
short circuit rugged IGBT
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD
600 V - 8 A - short circuit rugged IGBT
Features
■ Lower on voltage drop (VCE(sat)) ■ Lower CRES
(22 views)
KDG30N120H2
IGBT
Features
1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms
(21 views)
THB6064AH (HHBY)
High breakdown Two-phase hybrid stepping motor driver
HHBY
THB6064AH
、
THB6064AH
、：
● MOSFET ， Ron＝0.4Ω ● 50VDC， 4.5A（） ● （1/2、1/8、1/10、1/16、1/20、1/32、1/40、1/64） ● ● 4 ●
、：
-1-
` 2011 02
HH
(21 views)
KD2406 (SUNON)
(KDxxxx) DC Brushless FAN
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T320XVN02.9-SKD (AUO)
TFT LCD
T320XVN02.9 SKD Product Specification Rev 1.0
Model Name: T320XVN02.9 (SKD)
Issue Date : 2013/2/06
( ) Preliminary Specifications (※) Final Specifica
(19 views)
FKD0034 (FETek)
N-Channel MOSFET
FETek Technology Corp.
FKD0034
N-Ch 100V Fast Switching MOSFETs
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline
(17 views)
IGBT
Features
1200V,40A VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms S
(17 views)
KDG25N120H1
IGBT
Features
1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms
(17 views)
2N7002KDW (WEITRON)
Dual N-Channel MOSFET
Dual N-Channel MOSFET
P b Lead(Pb)-Free
Features:
* Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ES
(15 views)
1N60 (KD)
SMALL SIGNAL SCHOTTKY DIODE
1N60 THRU 1N60P
SMALL SIGNAL SCHOTTKY DIODE
Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere
FEATURES
● Metal-on-silicon junctio
(15 views)
GF19NC60KD (STMicroelectronics)
600V short-circuit rugged IGBT
STGB19NC60KD, STGF19NC60KD, STGP19NC60KD
20 A, 600 V short-circuit rugged IGBT
Features
■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no
(15 views)
SS220 (KD)
SCHOTTKY BARRIER RECTIFIER
SS215 THRU SS220
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere
FEATURES
● The plastic package carries Un
(15 views)
IGBT
Features
1200V,20A,VCE(sat)(typ.)=2.1V@VGE=15V，20A High speed switching Higher system efficiency Soft current turn-off waveforms Square
(15 views)
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit rugg
(15 views)
