SKD502T, SKSS055N08N SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Ex

US1AF THRU US1MF SURFACE MOUNT ULTRA FAST RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ● Glass Passivated Die C

MB1M THRU MB10M MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 Volts Forward Current - 0.8 Ampere FEATURES ● Surge overloa

w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c

IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

FETek Technology Corp.  Super Low Gate Charge  100% EAS Guaranteed  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell d

KDG30N120H2 IGBT Features  1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

FETek Technology Corp.  Super Low Gate Charge  100% EAS Guaranteed  Excellent CdV/dt effect decline  Green Device Available  Advanced high cell d

STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES

IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

www.DataSheet4U.com KD2006-DC10A Printhead Thick film thermal printhead KD2006-DC10A The KD2006-DC10A is a 24V standard thick film thermal printhead

MBRF1020CT THRU MBRF10100CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Ampere FEATURES ● Plastic package has

PD- 91577B IRG4PH40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor c

N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c

STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no

1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

SS215 THRU SS220 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Un