JILIN SINO Datasheet | Specifications & PDF Download

NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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SiC Schottky Diode R SC20J120A MAIN CHARACTERISTICS VRRM IF,TC≤150℃ QC Typ 1200V 20A 95nC Package ⚫ ⚫ ⚫ DC/DC ⚫ ⚫ ⚫ APPLICATIONS ⚫Sola

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4204D IC VCEO PC(TO-126/126S) PC(TO-220) MAIN CHARACTERISTICS 3A 400V 30W 60W Package

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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N N-CHANNEL IGBT R TT015N120EQ MAIN CHARACTERISTICS Package IC VCES VCESAT-TYP 15A 1200V 1.60V  APPLICATIONS  General purpose inverter

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FAST RECOVER DIODE R 10F60S3 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj(max) VF(max) trr（ max） 5×2 A 600 V 150℃ 1.8V 45ns   APPLICATION

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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N R N-CHANNEL MOSFET JCS9N50F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 8A 500 V 0.8 Ω 59 nC APPLICATIO

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4210 IC VCEO PC(TO-220C) MAIN CHARACTERISTICS 10A 500V 100W Package z z z z z

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4242D(T/I/M) IC VCEO PC(TO-92) PC(TO-251\TO-252) PC(TO-126) MAIN CHARACTERISTICS 1.5A 4

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY 3DD2901 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ

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R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 650 V 1.3 Ω 25 nC APPLICATIONS z Hi

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R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z Hig

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package    LED  Crss ( 3.8pF)    dv/dt R

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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