Inchange Semiconductor IRF Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ40 FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technolo

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF240 DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Volt

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Volt

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS644A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide T

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isc N-Channel MOSFET Transistor IRFP453 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Re

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissi

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP151R FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Vol

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4310， IIRFB4310 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Mini

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF530 FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF431 DESCRIPTION ·silicon Gate for fast switching at elevate ·rug

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF340 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Sw

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