IRL Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

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PD - 93757C IRLML2502 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in T

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ44N， IIRLZ44N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤22mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.8mΩ ·Enhancement mode: ·100% avalanche t

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l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l

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PD - 91366 IRL2203N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper

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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching G1 S2 Descripti

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www.DataSheet.co.kr PD- 91380B IRLL2705 HEXFET® Power MOSFET Surface Mount Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of

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PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743，IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB3813，IIRLB3813 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.95mΩ ·Enhancement

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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$GYDQFHG 3RZHU 026)(7 IRL610S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 1

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PD - 93854A www.DataSheet4U.com Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Sw

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IRLB4132PbF Application Optimized for UPS/Inverter Applications Low Voltage Power Tools Benefits Best in Class Performance for UPS/Inverter App

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL2203N，IIRL2203N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement

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isc P-Channel MOSFET Transistor IRLR9343,IIRLR9343 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·Enhancement mode: ·100% avalanche te

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