INFRARED Datasheet | Specifications & PDF Download

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Infrared Emitter Product No: M T E 1 3 0 0 N N 1 - W R C Peak Emission Wavelength: 1300nm The 1300nm IR emitter series is designed for applications r

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v 1.0 26.04.2013 RLT1080-10G Description RLT1080-10G is a Laser Diode emitting at 1080 nm with rated output power of 10 mW CW at room temperature. T

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RH5050_SPEC IC RH5050 Revision 1.3 2011-12-30 RH5050_SPEC_Ve1.3 1/10 12/30/2011 RH5050_SPEC 1.

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SGX Europe Sp. z o.o. Building 11 Ligocka St. 103, 40-568 Katowice, Poland T: +48 (0) 32 438 4778 E: sales.is@sgxsensortech.com www.sgxsensortech.com

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SC16C550 Universal Asynchronous Receiver/Transmitter (UART) with 16-byte FIFO and infrared (IrDA) encoder/decoder Rev. 05 — 19 June 2003 Product data

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VS838 1 Free Datasheet http://www.Datasheet4U.com :VS838 1．： VS838 PIN 、 IC,， REACH SGS ， 。 2.： ●； ●，2.7-5.5V； ●；； ●，； ● TTL、CMOS ，。 3．: ■(,,D

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www.vishay.com VOM617A Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package A1 C2 4C 3E i179089 LINKS TO AD

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D203S D203S Standard specifications and dimensions Recommended Model Encapsulation Type IR Receiving Electrode Window Size Spectral Response Transmitt

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ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT

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RLCO-830-1000-F TECHNICAL DATA High Power Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 830 nm • Optical

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A-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD. SURFACE MOUNT CHIP LED LAMPS 1206 Package Chip Infrared LED Part Number: IR15-21C/L10 Package outlines & Re-flo

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LF0038L 1 :LF0038L 1．： LF0038L PIN 、 IC,， REACH SGS ， 。 2.： ●； ●，2.7-5.5V； ●；； ●，； ● TTL、CMOS ，。 3．: ■( MP3、MP4,)； ■（、，）； ■。 4．： LF0038L 5．: 2

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GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114A1 is a GaAs infrared emitting diode molded in clear, lensed s

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F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46

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Photocoupler K5610 • K5611 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pac

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE133 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) Ø 0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø 0.095 (2.41

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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