INCHANGE R60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6003KND3 FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor R6010MNX FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6011ENJ FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·175℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Effi

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isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor R6002END3 FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor R6024KNZ1 FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor R6020ENJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6009JNJ FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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isc N-Channel MOSFET Transistor R6076ENZ1 FEATURES ·Drain Current –ID= 76A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR60L45CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR60H100CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capabilit

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR6080PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier,

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot va

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Schottky Barrier Rectifier INCHANGE Semiconductor SBR60A300CT FEATURES ·With TO-220 packaging ·Soft, fast switching capability ·Low forward voltage

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Isc N-Channel MOSFET Transistor IPB60R600CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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Isc N-Channel MOSFET Transistor IPB60R600C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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