Hitachi Semiconductor 2SK Datasheet | Pinout, Features, Price Comparison & PDF

www.DataSheet4U.com 2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High spee

2SK1517, 2SK1518 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High spe

2SK1306 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4

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2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 Free D

2SK1762 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switch

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2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive device

2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Feat

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Compleme

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2SK1626, 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Feat

2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features • • • • • Low on-resistance, High breakdown voltage

2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500

2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4

2SK2927 Silicon N Channel MOS FET High Speed Power Switching ADE-208-550D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. •

2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current.

2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • L

www.DataSheet4U.com 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High spee