Hitachi Semiconductor 2SJ Datasheet | Specifications & PDF Download

2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Feat

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2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance R DS(on) = 25 mΩ typ. • 4V gat

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2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ533 Silicon P Channel MOS FET High Speed Power Switching ADE-208-649B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω ty

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2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switchi

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2SJ350 Silicon P-Channel MOS FET ADE-208-138 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed sw

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2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221

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2SJ528(L),2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance RDS(on)

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2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ553(L),2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-650B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on)

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2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017 Ω ty

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2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B (Z) 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -

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2SJ588 Silicon P Channel MOS FET High Speed Switching ADE-208-802 (Z) 1st.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -1

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www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–resist

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